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Electron Microscope Study of Initial Stage of Growth of ZnSe on GaAs

Published online by Cambridge University Press:  21 February 2011

J. M. Gonsalves ,
N. Otsuka ,
J. Qiu ,
M. Kobayashi ,
R. L. Gunshor  and
L. A. Kolodziejski
J. M. Gonsalves
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
J. Qiu
Affiliation:
School of Electric Engineering, Purdue University, West Lafayette, IN 47907
M. Kobayashi
Affiliation:
School of Electric Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electric Engineering, Purdue University, West Lafayette, IN 47907
L. A. Kolodziejski
Affiliation:
School of Electric Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Recent molecular beam epitaxy (MBE) studies have shown that depending on surface conditions of GaAs two different growth modes, layer-by-layer or island, occur at the initial stage of the growth of ZnSe on (100) GaAs. In this study, we have observed various types of GaAs surfaces used for the MBE growth of ZnSe by reflection electron microscopy and ZnSe islands on a GaAs substrate by cross-sectional high resolution electron microscopy. Results of these observations suggest that the occurrence of two growth modes is determined by atomistic structures of GaAs surfaces such as the surface stoichiometry or the density of atomic steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 375
Copyright
Copyright © Materials Research Society 1989

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References

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