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Electron Irradiation on Amorphous Silicon

Published online by Cambridge University Press:  11 February 2011

Ju-Yin Cheng  and
J. Murray
Ju-Yin Cheng
Affiliation:
Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, U.S.A.
J. Murray
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, U.S.A.
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Abstract

For the first time we use fluctuation electron microscopy to study the effect of electron irradiation on amorphous silicon. Before showing the results, we compare two variable coherence methods, hollow cone and dark field. These techniques have been successfully implemented in the Philips CM12, JEOL 4000 and Hitachi 9000 microscopes. The image fluctuations for ion-implanted and vacuum-deposited amorphous silicon can be reliably measured under the conditions used in these microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.8
Copyright
Copyright © Materials Research Society 2003

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References

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