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Electron Irradiation of 4H SiC by TEM: An Optical Study

  • S. G. Sridhara (a1), P. O. Å. Persson (a1), F. H. C. Carlsson (a1), J. P. Bergman (a1), E. Janzén (a2), G. Evans (a2) and J. W. Steeds (a1)...

Abstract

An intrinsic defect spectrum, commonly observed after ion-implantation, electron, proton or neutron irradiation and even after SIMS measurements is investigated using photoluminescence techniques. The spectrum is associated with carbon related isoelec-tronic centers having a pseudodonor like behaviour. Vacancy-interstitial pair complexes are tentatively suggested as the defect centers responsible for this intrinsic spectrum.

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Electron Irradiation of 4H SiC by TEM: An Optical Study

  • S. G. Sridhara (a1), P. O. Å. Persson (a1), F. H. C. Carlsson (a1), J. P. Bergman (a1), E. Janzén (a2), G. Evans (a2) and J. W. Steeds (a1)...

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