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Electron Cyclotron Resonance Hydrogen Plasma Induced Defects in Thermally Grown and Spuiter Deposited SiO2

  • W. L. Hallett (a1), R. A. Ditizio (a1) and S. J. Fonash (a1)

Abstract

In this study we show that upon exposure to electron cyclotron resonance hydrogen plasmas, both thermally grown and sputter deposited oxides are degraded, resulting in large shifts of flat band voltage, and increases in fixed charge and interface state density.

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Electron Cyclotron Resonance Hydrogen Plasma Induced Defects in Thermally Grown and Spuiter Deposited SiO2

  • W. L. Hallett (a1), R. A. Ditizio (a1) and S. J. Fonash (a1)

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