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Electron Cyclotron Resonance Deposition of a-Si:H and a-C:H Films

Published online by Cambridge University Press:  25 February 2011

Y. H. Shing ,
C. L. Yang ,
C. E. Allevato  and
F. S. Pool
Y. H. Shing
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
C. L. Yang
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
C. E. Allevato
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
F. S. Pool
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
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Abstract

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of ˜ 25 Å/sec and a light-to-dark conductivity ratio of 1 × 105 for a- Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H * emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH* emission intensity of ECR silane plasma suggests that SiH* species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 63
Copyright
Copyright © Materials Research Society 1989

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References

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