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Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

Published online by Cambridge University Press:  22 February 2011

M. Boudreau ,
M. Boumerzoug ,
R. V. Kruzelecky ,
P. Mascher ,
P. E. Jessop  and
D.A. Thompson
M. Boudreau
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
M. Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
R. V. Kruzelecky
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
P. E. Jessop
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
D.A. Thompson
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
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Abstract

Silicon oxynitrides with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECRPECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN – 1000TM). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as determined by in situ ellipsometry. Auger electron spectroscopy showed that only low levels of carbon (< 3 at%) are present. The SiO2 and Si3N4 films are close to stoichiometric, with low levels of bonded hydrogen as determined by infrared absorption spectroscopy.

Planar waveguide structures were fabricated and tested using the prism coupling technique to determine the mode effective indices. These are compared to those expected from the ellipsometry measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 183
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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