Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-11T05:30:33.592Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Channeling Analysis of Elastic Strains in InGaAs Thin Films

Published online by Cambridge University Press:  28 February 2011

R. Keller ,
W. Zielinski ,
W.W. Gerberich  and
J.A. Kozubowski
R. Keller
Affiliation:
University of Minnesota, Dept. of Chemical Engineering and Materials Science, 421 Washington Ave. SE, Minneapolis, MN 55455
W. Zielinski
Affiliation:
University of Minnesota, Dept. of Chemical Engineering and Materials Science, 421 Washington Ave. SE, Minneapolis, MN 55455
W.W. Gerberich
Affiliation:
University of Minnesota, Dept. of Chemical Engineering and Materials Science, 421 Washington Ave. SE, Minneapolis, MN 55455
J.A. Kozubowski
Affiliation:
On leave from Institute of Materials Science and Engineering, Warsaw University of Technology, Narbutta 85, 01-524 Warsaw, Poland
Get access

Abstract

Inx Ga1-x As thin films were grown by MBE on (001) GaAs substrates. The associated 1% lattice mismatch resulted in the development of an elastic strain field in the systems. Electron channeling patterns (ECP) were then obtained from these samples in an SEM at different accelerating voltages, allowing data to be obtained over various information depths within the samples while keeping them intact. The ECPs showed sensitivity to the elastic strains both parallel and perpendicular to the film/substrate interface. Certain high order Laue zone (HOLZ) line positions showed good sensitivity to the Poisson strain in the films due to a rotation of atomic planes. These line positions varied with film thickness and distance from the interface. The technique shows promise as a tool for relatively easy elastic strain determination. Its limitations will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 159
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Bassignana, J.C. and Tan, C.C., J. Appl. Cryst. 22, 269 (1989).Google Scholar
2Chems, D., Kelly, C.J. and Preston, A.R., Ultramicroscopy 24, 355 (1988).Google Scholar
3Hamdi, A.H., Speriosu, V.S., Tandon, J.L. and Nicolet, M.A., Phys. Rev. B 31, 2343 (1985).Google Scholar
4Kozubowski, J.A., Gerberich, W.W. and Stefanski, T., J. Mater. Res. 3, 710 (1988).Google Scholar
5Kozubowski, J.A., Keller, R. and Gerberich, W.W., in preparation.Google Scholar
6Whaley, G.J. and Cohen, P.I., J. Vac. Sci. Tech. B 6, 625 (1988).Google Scholar
7Joy, D.C., Newbury, D.E. and Davidson, D.L., J. Appl. Phys. 53, R81 (1982).Google Scholar
8Wright, A.G., PhD thesis, University of Minnesota, 1987.Google Scholar
9Abroyan, L.A. and Podsvirov, O.A., Sov. Tech. Phys. Lett. 7, 78 (1981).Google Scholar
10Davidson, S.M., Nature 227, 487 (1970).Google Scholar