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Electron beam induced effects in Cu/GeSe2 amorphous films

Published online by Cambridge University Press:  15 February 2011

J.S. Romero  and
A.G. Fitzgerald
J.S. Romero
Affiliation:
Carnegie Laboratory of Physics, Department of Electronic Engineering and Physics, University of Dundee, DD1 4HN Scotland (UK).
A.G. Fitzgerald
Affiliation:
Carnegie Laboratory of Physics, Department of Electronic Engineering and Physics, University of Dundee, DD1 4HN Scotland (UK).
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Abstract

Copper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 777: Symposium A – Nanostructuring Materials with Energetic Beams , 2003 , T4.7
Copyright
Copyright © Materials Research Society 2003

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