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Electromigration Resistance and Mechanical Strength: New Perspectives for Interconnect Materials?

Published online by Cambridge University Press:  22 February 2011

E. Arzt ,
O. Kraft ,
J. Sanchez ,
S. Bader  and
W. D. Nix
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Inst, für Werkstoffwissenschaft, Stuttgart, Germany
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, Inst, für Werkstoffwissenschaft, Stuttgart, Germany
J. Sanchez
Affiliation:
Max-Planck-Institut für Metallforschung, Inst, für Werkstoffwissenschaft, Stuttgart, Germany
S. Bader
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA, USA
W. D. Nix
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA, USA
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Abstract

A brief review is given of models which propose a correlation between electromigration resistance and the mechanical strength of thin film interconnects. In an attempt to achieve metallurgical strengthening and improved electromigration resistance, aluminum films were implanted with oxygen ions. Preliminary electromigration tests on line arrays patterned from these films resulted in lifetimes comparable to the standard Al films. The lack of improvement is attributed to enhanced hillock/whisker growth during electromigration in the implanted interconnects. This behavior is coincident with a lower compressive strength in similarly treated continuous films at elevated temperatures as measured by the substrate curvature technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 677
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Blech, I. A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
2. Kinsbron, E., Blech, I.A., and Komem, Y., Thin Solid Films 446, 139 (1977).CrossRefGoogle Scholar
3. Blech, I.A. and Herring, C., Appl. Phys. Lett. 22, 131 (1976).Google Scholar
4. Nix, W.D. and Arzt, E., Metall. Trans., to be published.Google Scholar
5. Blech, I. A. and Tai, K.L., Appl. Phys. Lett. 30 387 (1977).CrossRefGoogle Scholar
6. Schreiber, H.-U., Solid-State Electronics 28., 1153 (1985)Google Scholar
7. Black, J.R., IEEE Trans. Electr. Dev. 16, 338 (1969).Google Scholar
8. Arzt, E. and Nix, W.D., J. Mat. Res. 6, 731 (1991).Google Scholar
9. Glickman, E.E., Osipov, N.A. and Ivanov, E.D., Defect and Diffusion Forum, 66 – 69. 1129–1142(1989).Google Scholar
10. Glickman, E.E. and Vilenkin, A., Proc. 2nd Europ. Symp. “Reliability of Electron Device Failure Physics and Analysis”, Bordeaux (1991).Google Scholar
11. Arzt, U.E., to be published.Google Scholar