Skip to main content Accessibility help

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

  • XinYi Chen (a1), Alan M. C. Ng (a1), Aleksandra B. Djurišić (a1), Chi Chung Ling (a1), Wai-Kin Chan (a2), Wai Keung Fong (a3), Hsian Fei Lui (a3) and Charles Surya (a3)...


Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.



Hide All
1. Özgur, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S. J. and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).
2. Djurišić, A. B., Ng, A. M. C. and Chen, X. Y., Prog. Quantum Electron. 34, 191 (2010).
3. Djurišić, A. B. and Leung, Y. H., Small 2, 944 (2006).
4. Djurišić, A. B., Chen, X. Y., Leung, Y. H. and Ng, A. M. C., J. Mater. Chem. 22, 6526 (2012).
5. Chen, X. Y., Ng, A. M. C., Fang, F., Djurišić, A. B., Chan, W. K., Tam, H. L., Cheah, K. W., Fong, P. W. K., Lui, H. F. and Surya, C., J. Electrochem. Soc. 157, H308 (2010).
6. Park, W. I., Yi, G. -C., Adv. Mater. 16, 87 (2004).
7. Ng, A. M. C., Chen, X. Y., Fang, F., Hsu, Y. F., Djurišić, A. B., Ling, C. C., Tam, H. L., Cheah, K. W., Fong, P. W. K., Lui, H. F., Surya, C. and Chan, W. K., Appl. Phys. B 100, 851 (2010).
8. Jeong, M. –C., Oh, B. –Y., Ham, M. –H., Lee, S. –W. and Myoung, J. –M., Small 3, 568 (2007).
9. Lee, H. –Y., Lee, C. –T. and Yan, J. –T., Appl. Phys. Lett. 97, 111111 (2010).
10. Chen, X. Y., Ng, A. M. C., Fang, F., Ng, Y. H., Djurišić, A. B., Tam, H. L., Cheah, K. W., Gwo, S., Chan, W. K., Fong, P. W. K., Lui, H. F. and Surya, C., J. Appl. Phys. 110, 094513 (2011).
11. Rogers, D. J., Hosseini Teherani, F., Yasan, A., Minder, K., Kung, P. and Razeghi, M., Appl. Phys. Lett. 88, 141918 (2006).
12. Sadaf, J. R., Israr, M. Q., Kishwar, S., Nur, O. and Willander, M., Nanoscale Res. Lett. 5, 957 (2010).
13. Ahn, J., Mastro, M. A., Hite, J., Eddy, C. R. and Kim, J., Appl. Phys. Lett. 97, 082111 (2010).
14. Lupan, O., Pauporté, T. and Viana, B., Adv. Mater. 22, 3298 (2010).
15. Park, S. –H., Kim, S. –H. and Han, S. –W., Nanotechnology 18, 055608 (2007).
16. Zhu, H., Shan, C. X., Yao, B., Li, B. H., Zhang, J. Y., Zhang, Z. Z., Zhao, D. X., Shen, D. Z., Fan, X. W., Lu, Y. M. and Tang, Z. K., Adv. Mater. 21, 1613 (2009).
17. Guo, Z., Zhang, H., Zhao, D. X., Liu, Y. C., Yao, B., Li, B. H., Zhang, Z. Z. and Shen, D. Z., Appl. Phys. Lett. 97, 173508 (2010).
18. Lu, T. C., Ke, M. Y., Yang, S. C., Cheng, Y. W., Chen, L. Y., Lin, G. J., Lu, Y. H., He, J. H., Kuo, H. C. and Huang, J. J., Opt. Lett. 35, 4109 (2010).
19. Jiao, S. J., Lu, Y. M., Shen, D. Z., Zhang, Z. Z., Li, B. H., Zhang, J. Y., Yao, B., Liu, Y. C. and Fan, X. W., Phys. Stat. Sol. C 3, 972 (2006).
20. Chen, X. Y., Fang, F., Ng, A. M. C., Djurišić, A. B., Chan, W. K., Lui, H. F., Fong, P. W. K., Surya, C. and Cheah, K. W., Thin Solid Film 520, 1125 (2011).
21. Fu, H. K., Cheng, C. L., Wang, C. H., Lin, T. Y. and Chen, Y. F., Adv. Funct. Mater. 19, 3471 (2009).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed