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Electroluminescence from GalnN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

Published online by Cambridge University Press:  01 February 2011

Barbara Neubert ,
Frank Habel ,
Peter Bruckner ,
Ferdinand Scholz ,
Till Riemann  and
Jürgen Christen
Barbara Neubert
Affiliation:
Optoelectronics Department, University of Ulm89069. Ulm, Germany
Frank Habel
Affiliation:
Optoelectronics Department, University of Ulm89069. Ulm, Germany
Peter Bruckner
Affiliation:
Optoelectronics Department, University of Ulm89069. Ulm, Germany
Ferdinand Scholz
Affiliation:
Optoelectronics Department, University of Ulm89069. Ulm, Germany
Till Riemann
Affiliation:
Institute for Experimental Physics, Otto-von-Guericke Univ. Magdeburg39106. Magdeburg, Germany
Jürgen Christen
Affiliation:
Institute for Experimental Physics, Otto-von-Guericke Univ. Magdeburg39106. Magdeburg, Germany
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Abstract

Non (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.32
Copyright
Copyright © Materials Research Society 2005

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References

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