Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-18T06:24:44.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrodeposited Gold: Real Time Stress And Structural Change At Room Temperature.

Published online by Cambridge University Press:  15 February 2011

R. E. Acosta ,
I. Babich ,
P. Blauner  and
A. Wagner
R. E. Acosta
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
I. Babich
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
P. Blauner
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
A. Wagner
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

In this work the stress and grain structure of electrodeposited gold films was determined as a function of time from deposition, with measurements being conducted in time intervals of minutes to days after deposition.

A test structure that allows accurate and unambiguous measurement of out of plane distortion (OPD) was developed. Using this structure the time evolution of the stress of the films was followed using an interferometric microscope. Scanning ion microscopy was used to determine the time evolution of the grain structure of the samples. This technique, based on focused ion beam imaging, allows determination of grain structure of thin films without special sample preparation or restrictions in film thickness.

The sign, magnitude, and stability of the stress at room temperature was found to be a function of the rate of deposition and the concentration of additive in the electrodeposition solution.

For some of the films studied, grain growth from the hundreds of Angstroms to tens of microns was found to occur in a matter of minutes at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 306: Symposium K – Materials Aspects of X-Ray Lithography , 1993 , 265
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Acosta, R. E. et al, Microelectronic Engineering 3 (1985) 615–621.CrossRefGoogle Scholar
2. Khan-Malek, C. et al, J. Vac. Sci. Technol. B9 (1991) 3329–3332.CrossRefGoogle Scholar
3. Acosta, R. E. et al, Microelectronic Engineering 17 (1992) 189–192.CrossRefGoogle Scholar
4. Ku, Y. C. etal, J. Vac. Sci. Technol. B10 (1992) 3169–3172 CrossRefGoogle Scholar
5. Celler, G. K. et al, J. Vac. Sci. Technol. B10 (1992) 3186–3190 CrossRefGoogle Scholar
6. Yanof, A. W. et al, Proc. SPIE 632 (1986) 118–132 CrossRefGoogle Scholar
7. Wagner, A. et al, J. Vac. Sci. Technol. B8 (1990), 1557–1564.CrossRefGoogle Scholar
8. Levi-Setti, R. et al, Nucl. Instrum. Methods 205. (1983) 299–309.CrossRefGoogle Scholar
9. Franklin, R. E. et al, J. Mater. Sci. Lett. 7 (1988) 39–41.CrossRefGoogle Scholar
10. Acosta, R. E. etal, Proc. SPIE 448 (1983) 114–118.CrossRefGoogle Scholar
11. Berry, B. S. and Pritchet, W. C., J. Appl. Phys. 67 (1990) 3661–3668.CrossRefGoogle Scholar
12. Nash, S. C. and Faure, T. B., J. Vac. Sci. Technol. B9 (1991) 3324–3328.CrossRefGoogle Scholar
13. Newman, J., ”Electrochemical Systems”. Prentice Hall, Englewood Cliffs, NJ (1991).Google Scholar
14. Chaudhari, P., J. Vac. Sci. Technol. 9 (1972) 520–522.CrossRefGoogle Scholar
15. Chiu, S.-L. and Acosta, R. E., J. Vac. Sci. Technol. B8 (1990) 1589–1594.CrossRefGoogle Scholar
16. Johnson, W. A. et al, J. Vac. Sci. Technol. B10 (1992) 3155–3158.CrossRefGoogle Scholar
17. Chu, W. et al, Microelectronic Engineering 17 (1991) 223–226.CrossRefGoogle Scholar