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Electrochemical Etching in the GaN-Based Technology

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov ,
A. G. Drizhuk ,
D. V. Sidorov ,
W. V. Lundin ,
B. V. Pushnyi  and
A. S. Usikov
V. G. Sidorov
Affiliation:
State Technical University, St.Petersburg, Russia
A. G. Drizhuk
Affiliation:
Polytechnical Institute, Vologda, Russia
D. V. Sidorov
Affiliation:
State Technical University, St.Petersburg, Russia
W. V. Lundin
Affiliation:
A. F.loffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, Russia
B. V. Pushnyi
Affiliation:
A. F.loffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, Russia
A. S. Usikov
Affiliation:
A. F.loffe Physico-Technical Institute, Russian Academy of Science, St.Petersburg, Russia
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Abstract

In this study, both single undoped GaN epilayers and GaN-based device structures was treated by electrochemical etching in the dilute water solution of KOH or NaOH. Our investigations showed that in the undoped GaN epilayers grown by MOCVD the electrical and optical properties were nonuniform in depth. In this case, high defective and high conductive sublayer adjacent to the substrate was revealed by the electrochemical etching. This high conductive region was proved to condition the results of Hall effect measurements. Electrolyte etching of i-n GaN-based device structures grown by HVPE gave rise to significant increasing of the electroluminescence intensity. Influence of electrochemical etching on luminescence properties of the device structure is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 513
Copyright
Copyright © Materials Research Society 1998

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References

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