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Electrochemical Deposition of (Bi,Sb)2Te3 for Thermoelectric Microdevices

Published online by Cambridge University Press:  01 February 2011

Jean-Pierre Fleurial
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
Jennifer A. Herman
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
G. Jeffrey Snyder
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
Margaret A. Ryan
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
Alexander Borshchevsky
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
Chen-Kuo Huang
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive Pasadena, CA 91109, USA
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Abstract

New experimental methods have been developed to electrochemically deposit p-type Sb-rich Bi2-xSbxTe3, Pb-doped and Bi-doped Bi2Te3, and PbTe thick films. Some of the deposited films were dense and had a smooth surface morphology. These films were deposited potentiostatically at room temperature in an acidic aqueous electrolyte. Experimental deposition of Bi2Te3 alloys into various thick nanoporous templates made out of anodized alumina has also been achieved. Miniaturized thermoelements for microdevices (25 μm tall, 60 μm diameter) were grown by plating through thick photoresist templates. The experimental techniques developed, as well as the transport properties of some of the films and filled templates, will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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