Skip to main content Accessibility help

Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences

  • Hirotake Okino (a1), Masahiro Hayashi (a2), Takashi Iijima (a3), Shintaro Yokoyama (a4), Hiroshi Funakubo (a5), Nava Setter (a6) and Takashi Yamamoto (a7)...


Electric-field-induced displacements of PZT film capacitor Pt/PZT/Pt/SiO2/Si(100) were calculated by finite element method (FEM) with changing all piezoelectric and elastic constants of PZT so as to discuss how to evaluate intrinsic d 33 of piezoelectric thin films. Two kinds of conditions, namely, “ideal conditions” and “second-best conditions” are discussed. The ideal conditions indicate that the diameter of top electrode φTE is equal to or less than PZT film thickness t PZT and continuous PZT is etched to isolate the capacitor from the continuous piezoelectric film layer. Under the ideal conditions, d 33 measured by atomic force microscopy (AFM) and double beam interferometry (DBI) were the same value that was equal to intrinsic d 33 of PZT and was independent of other material constants. Under the second-best conditions, i.e. 20×t PZT < φTE for DBI and 20×t PZT < φTE < 0.5×(t sub: substrate thickness) for AFM, measured d 33 depended on only d 31, s 11, s 12 and s 13, and obeyed the Lefki's equation qualitatively. However, quantitative differences between FEM analysis and the Lefki's equation were not negligible.



Hide All
1 Kholkine, A. L., Wüetchrich, C., Taylor, D. V., and Setter, N., Rev. Sci. Instrum. 67, 1935 (1996).
2 Tsurumi, T., Ozawa, S., Abe, G., Ohashi, N., Wada, S., and Yamane, M., Jpn. J. Appl. Phys. 39, 5604 (2000).
3 Iijima, T., Ito, S., and Matsuda, H., Jpn. J. Appl. Phys. 41, 6735 (2002).
4 Gerber, P., Roelofs, A., Lohse, O., Kügeler, C., Tiedke, S., Böttger, U., and Waser, R., Rev. Sci. Instrum. 74, 2613 (2003).
5 Maiwa, H. and Ichinose, N., Jpn. J. Appl. Phys 39, 5403 (2000).
6 Bühlmann, S., Dwir, B., Baborowski, J., and Muralt, P., Appl. Phys. Lett. 80, 3195 (2002).
7 Nagarajan, V. et al. , Appl. Phys. Lett. 81, 4215 (2002).
8 Li, J.H., Chen, L., Nagarajan, V., Ramesh, R., and Roytburd, A. L., Appl Phys. Lett. 84, 2626 (2004).
9 Okino, H., Matsuda, H., Iijima, T., Yokoyama, S., Funakubo, H., and Yamamoto, T., Mater. Res. Soc. Symp. Proc. 784, 559 (2004).
10 Okino, H., Nakamura, K., Matsuda, H., Iijima, T., Yokoyama, S., Funakubo, H., and Yamamoto, T., Trans. Mater. Res. Soc. Jpn. 30, 47 (2005).
11 Lefki, K. and Dormans, G. J. M., J. Appl. Phys. 76, 1764 (1994).
12 Chen, L., Li, J.H., Slutsker, J., Ouyang, J., and Roytburd, A. L., J. Mater. Res. 19, 2853 (2004).
13 Berlincourt, D. A., Cmolik, C., and Jaffe, H., Proc. of Inst. Radio Eng. 48, 220 (1960).
14 Gerber, P., Roelofs, A., Kügeler, C., Böttger, U., Waser, R., and Prume, K., J. Appl. Phys. 96, 2800 (2004).
15 Kalinin, S. V., Karapetian, E., and Kachanov, M., Phys. Rev. B 70, 184101 (2004).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed