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Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences

Published online by Cambridge University Press:  26 February 2011

Hirotake Okino ,
Masahiro Hayashi ,
Takashi Iijima ,
Shintaro Yokoyama ,
Hiroshi Funakubo ,
Nava Setter  and
Takashi Yamamoto
Hirotake Okino
Affiliation:
hokino@nda.ac.jp, National Defense Academy, Dept. of Communications Eng., 1-10-20 Hashirimizu, Yokosuka, Kanagawa, 239-8686, Japan, +81-46-841-3810, +81-48-844-5911
Masahiro Hayashi
Affiliation:
s50421@ed.nda.ac.jp, National Defense Academy, Department of Communications Engineering, Japan
Takashi Iijima
Affiliation:
iijima-t@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Research Institute of Instrumentation Frontier, Japan
Shintaro Yokoyama
Affiliation:
yokoyama@iem.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Nava Setter
Affiliation:
nava.setter@epfl.ch, Ecole Polytechnique Fédérale de Lausanne, Ceramic Laboratory, Switzerland
Takashi Yamamoto
Affiliation:
ytakashi@nda.ac.jp, National Defense Academy, Department of Communications Engineering, Japan
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Abstract

Electric-field-induced displacements of PZT film capacitor Pt/PZT/Pt/SiO2/Si(100) were calculated by finite element method (FEM) with changing all piezoelectric and elastic constants of PZT so as to discuss how to evaluate intrinsic d33 of piezoelectric thin films. Two kinds of conditions, namely, “ideal conditions” and “second-best conditions” are discussed. The ideal conditions indicate that the diameter of top electrode φTE is equal to or less than PZT film thickness tPZT and continuous PZT is etched to isolate the capacitor from the continuous piezoelectric film layer. Under the ideal conditions, d33 measured by atomic force microscopy (AFM) and double beam interferometry (DBI) were the same value that was equal to intrinsic d33 of PZT and was independent of other material constants. Under the second-best conditions, i.e. 20×tPZT < φTE for DBI and 20×tPZT < φTE < 0.5×(tsub: substrate thickness) for AFM, measured d33 depended on only d31, s11, s12 and s13, and obeyed the Lefki's equation qualitatively. However, quantitative differences between FEM analysis and the Lefki's equation were not negligible.

Keywords

piezoresponsescanning probe microscopy (SPM)microelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-49
Copyright
Copyright © Materials Research Society 2006

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