Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-19T02:06:25.737Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric-Field Dependence of Electroreflectance and Photocurrent Spectra at Visible Wavelengths in Movpe-Grown InAlGaP Multiple Strained Quantum-Well Structures

Published online by Cambridge University Press:  21 February 2011

I. J. Fritz ,
O. Blum ,
R. P. Schneider Jr. ,
A. J. Howard  and
D. M. Follstaedt
R. P. Schneider Jr.
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
A. J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185
Get access

Abstract

We present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap Inx(AlyGa1-y)1-xP/Inx’(Aly’Ga1-y’)1-x’P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6°-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped Ino 5AI0.5P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46≤x≤0.52 and 0≤y≤0.4, corresponding to bandgaps in the red to yellow range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. Our results show that these new materials are promising for visible-wavelength optical modulator applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 525
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Schneider, R. P. Jr., Bryan, R. P., Lott, J. A. and Olbright, G. R., Appl. Phys. Lett. 60, 1830 (1992); J. A. Lott and R. P. Schneider, Jr., Electron Lett. 29, 830 (1993).Google Scholar
2 Lott, J. A., Schneider, R. P. Jr., Zolper, J. C. and Malloy, K. J., IEEE Photon. Technol. Lett. 5,631(1993).Google Scholar
3 Whitehead, M. and Parry, G., Electron. Lett. 25, 568 (1989).Google Scholar
4 Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H. and Burrus, C. A., Phys. Rev. B32, 1043 (1985).Google Scholar
5 Schneider, R. P. Jr., Jones, E. D., Lott, J. A. and Bryan, R. P., J. Appl. Phys. 72, 5397 (1992).Google Scholar
6 Follstaedt, D. M., Schneider, R. P. Jr. and Jones, E. D., Procedings of the Fall 1993 Materials Research Society, to be published.Google Scholar
7 Lothian, J. R., Kuo, J. M., Hobson, W. S., Lane, E., Ren, F. and Pearton, S. J., J. Vac. Sci. Technol. B 10, 1061 (1992); J. R. Lothian, J. M. Kuo, F. Ren and S. J. Pearton, J. Electron. Mater. 21, 441 (1992).Google Scholar
8 Fritz, I. J., Klem, J. F., Brennan, T. M., Wendt, J. R. and Zipperian, T. E., Supperlatt. and Microstr. 10, 99 (1991).Google Scholar
9 Schneider, R. P. Jr., Bryan, R. P., Jones, E. D. and Lott, J. A., Appl. Phys. Lett. 63, 1240 (1993).Google Scholar
10 Fritz, I. J., Brennan, T. M., Wendt, J. R. and Ginley, D. S., Appl. Phys. Lett. 57, 1245 (1990).Google Scholar
11 Grahn, H. T., Schneider, H. and von Klitzing, K., Phys. Rev. B 41, 2890 (1990).Google Scholar
12 Fritz, I. J., Blum, O., Schneider, R. P. Jr., Howard, A. J. and Follstaedt, D. M., submitted to Appl. Phys. Lett. Google Scholar