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Electrical transport in porous silicon from improved complex impedance analysis

Published online by Cambridge University Press:  17 March 2011

B. Remaki ,
S. Perichon ,
V. Lysenko  and
D. Barbier
B. Remaki
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS-INSAL 5511), INSA de Lyon, Bat. 502, Avenue A. Einstein, F - 69621 Villeurbanne cedex, France
S. Perichon
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS-INSAL 5511), INSA de Lyon, Bat. 502, Avenue A. Einstein, F - 69621 Villeurbanne cedex, France
V. Lysenko
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS-INSAL 5511), INSA de Lyon, Bat. 502, Avenue A. Einstein, F - 69621 Villeurbanne cedex, France
D. Barbier
Affiliation:
Laboratoire de Physique de la Matière (UMR CNRS-INSAL 5511), INSA de Lyon, Bat. 502, Avenue A. Einstein, F - 69621 Villeurbanne cedex, France
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Abstract

An improved analysis of the electrical transport parameters in meso-porous silicon is presented. Our approach is based on a separate contribution of the crystallites and their interconnections to the total impedance of meso-porous silicon layers. Meso-porous silicon morphology exhibits a columnar structure without quantum confinement. The electrical conduction is thus, partially due to the bulk conductivity within continuous paths of crystallites. The samples were realized on 0.02ω-cm p-type Si substrates. Porous silicon layers of 100µm of thickness and 50% of porosity were inserted in Al/SiO2/porous-Si/Si structures. Their electronic transport parameters were determined using complex impedance measurements. A frequency range of 102 - 107 Hz was used allowing an accurate determination of the impedance components. Combined with thermal stimulation, theses measurements provide a powerful tool for the interpretation of basic properties such as the carriers density in the crystallites and the trapping mechanisms. Our results were interpreted in terms of free carriers conduction in partially compensated crystallites prevailing at low frequencies. At high frequencies (above 10 kHz), the electrical conductivity is mainly controlled by hopping transport on localized states in the chaotic porous structure. Finally, the free carriers mobility, evaluated from SCLC measurement is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F3.2.1
Copyright
Copyright © Materials Research Society 2001

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