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Electrical Response of Polycrystalline Silicon Thin Film Transistor on Steel Foil under Mechanical Strain

Published online by Cambridge University Press:  01 February 2011

Po-Chin Kuo ,
Abbas Jamshidi-Roudbari  and
Miltiadis K Hatalis
Po-Chin Kuo
Affiliation:
pck205@lehigh.edu, Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
Abbas Jamshidi-Roudbari
Affiliation:
abj2@lehigh.edu, Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
Miltiadis K Hatalis
Affiliation:
mkh1@lehigh.edu, Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
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Abstract

This work investigates the effects of mechanical strain on electrical characteristics of polycrystalline thin film transistors (poly-Si TFTs). Poly-Si TFTs were fabricated on steel foil substrate and characterized under the strain ranging from -1.2% to 1.1% induced by bending. The electron mobility increased under tensile and decreased under compressive strain while that of the hole exhibited an opposite trend. For p-channel TFTs the normalized threshold voltage and subthreshold slope were a function of strain. In both n- and p-channel TFTs the off current decreased under tensile while it increased under compressive strain. The observed mobility trends in poly-Si TFTs are similar to those reported in single crystalline silicon devices.

Keywords

thin filmdevicespolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1116: Symposium I – Reliability and Properties of Electronic Devices on Flexible Substrates , 2008 , 1116-I01-05
Copyright
Copyright © Materials Research Society 2009

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References

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