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Electrical Resistance of Single-Wall Carbon Nanotubes with Determined Chiral Indices

Published online by Cambridge University Press:  31 January 2011

Letian Lin ,
Lu-Chang Qin ,
Sean Washburn  and
Scott Paulson
Letian Lin
Affiliation:
ltlin@physics.unc.edu, University of North Carolina at Chapel Hill, Curriculum in Applied Sciences and Engineering, Chapel hill, North Carolina, United States
Lu-Chang Qin
Affiliation:
lcqin@physics.unc.edu, University of North Carolina at Chapel Hill, Curriculum in Applied Sciences and Engineering, Chapel hill, North Carolina, United States
Sean Washburn
Affiliation:
sean@physics.unc.edu, University of North Carolina at Chapel Hill, Curriculum in Applied Sciences and Engineering, Chapel hill, North Carolina, United States
Scott Paulson
Affiliation:
paulsosa@jmu.edu, James Madison University, Physics and Astronomy, Harrisonburg, Virginia, United States
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Abstract

The properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.

Keywords

electrical propertiesnanostructuretransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K07-06
Copyright
Copyright © Materials Research Society 2010

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References

1. Biercuk, M. J., Ilani, S., Marcus, C. M. and McEuen, P. L., “Electrical Transport in Single-Wall Carbon Nanotubes”, Science of Fullerenes and Carbon Nanotubes, eds. Dresselhaus, M. S., Dresselhaus, G. and Eklund, P. C.. (Academic, 1996) pp.455–493.Google Scholar
2. Qin, L.-C., Rep. Prog. Phys. 69, 2761 (2006).Google Scholar
3. Anantram, M. P. and Leonard, F., Rep. Prog. Phys. 69, 507 (2006).Google Scholar
4. Yorikawa, H. and Muramatsu, S., Phys. Rev. B 52, 2723 (1995).Google Scholar
5. Charlier, J. C., Blasé, X. and Roche, S., Rev. Mod. Phys. 79, 677 (2007).Google Scholar
6. Hertal, T., Walkup, R. and Avouris, P., Phys. Rev. B 58, 13870 (1998).Google Scholar
7. Wong, E., Sheehan, P. and Lieber, C., Science 277, 1971 (1997).Google Scholar
8. Li, Y., Liu, J., Wang, Y. Q. and Wang, Z. L., Chem. Mater. 13, 1008 (2001).Google Scholar
9. Hall, A. R., An, L., Liu, J., Vicci, L., Falvo, M. R., Supefine, R. and Washburn, S., Phys. Rev. Lett. 96, 256102 (2006).Google Scholar
10. Liu, Z. and Qin, L.-C., Chem. Phys. Lett. 408, 75 (2005).Google Scholar
11. Dekker, C., Phys. Today 52, 22 (1999).Google Scholar
12. White, C. T. and Todorov, T. N., Nature 393, 240 (1998).Google Scholar
13. Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J. and Avouris, P., Phys. Rev. Lett. 92, 046401 (2004).Google Scholar
14. Hall, A. R., Falvo, M. R., Superfine, R. and Washburn, S., Nature Nanotechnology 2, 413 (2007).Google Scholar
15. Tomanek, D. and Schluter, M. A., Phys. Rev. Lett. 67, 2331 (1991).Google Scholar
16. Yao, Z., Kane, C. L. and Dekker, C., Phys. Rev. Lett. 84, 2941 (2000).Google Scholar
17. Perebeions, V., Terso, J. and Avouris, P., Phys. Rev. Lett. 94, 86802 (2005).Google Scholar
18. Mann, D., Javey, A., Kong, J., Wang, Q. and Dai, H. J., Nano Lett. 3, 1541 (2003).Google Scholar
19. Naeemi, A. and Meindl, J. D., IEEE Elec. Dev. Lett. 28, 135 (2007).Google Scholar
20. Yang, L., Anantram, M. P., Han, J. and Lu, J. P., Phys. Rev. B 60, 13874 (1999).Google Scholar
21. Tombler, T. W., Zhou, C., Alexseyev, L., Dai, H. J., Liu, L., Jayanthi, C. S., Tang, M. and Wu, S.-Y., Nature 405, 769 (2000).Google Scholar
22. Chen, D., Sasaki, T., Tang, J. and Qin, L.-C., Phys. Rev. B 77, 125412 (2008).Google Scholar