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Electrical Properties of (Zn, Mn) Containing Multilayer Metallizations to p-Type InGaAs/InP

Published online by Cambridge University Press:  15 February 2011

Patrick W. Leec ,
Geoffrey K. Reeves  and
Wei Zhou
Patrick W. Leec
Affiliation:
Telstra Research Laboratories, Clayton, 3168, Victoria, Australia
Geoffrey K. Reeves
Affiliation:
Royad Melbourne Institute of Technology, 3001, Victoria, Australia
Wei Zhou
Affiliation:
Royad Melbourne Institute of Technology, 3001, Victoria, Australia
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Abstract

The specific contact resistance, pc, of Au/Zn/Au, Ni/Zn/Ni/Au, Pd/Zn/Pt/Au and Pd/Mln/Sb/Pd/Au contacts to p-In0.47Ga0.53As/ InP has been measured as a function of layer thickness of Zn or Mn. All of the as-deposited contacts were ohmic, with pc = 1−2 × 10−5 Ω cm2. Increasing thickness of the Zn layer above 200 Å in the Au/Zn/Au contacts resulted in a minor decrease in pc while producing no change in the Ni/Zn/Ni/Au metallization. For the as-deposited Pd/Mn/Pd/Au contacts, the value of pc was independent of thickness of the Mn layer but differences in pc emerged at annealing temperatures of ≥ 250°. The analysis of these structures by RBS has shown an extensive intermixing of the metal layers at an annealing temperature of 450 °. In the Pd/Zn/Pt/Au contacts, the value of pc was reduced to a minimum value of 8 × 10−6 Ω cm2 by annealing at a temperature of 500 °. An examination of the Pd/Zn/Pt/Au configuration by RBS has shown that the Pt layer acted as a barrier for the indiffusion of the Au.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 425
Copyright
Copyright © Materials Research Society 1995

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References

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