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Electrical Properties of Nanoscale Tisi2 Islands on Si

  • Jaehwan Oh (a1), Hoon Ham (a2), Peter Laloli (a1) and R. J. Nemanich (a1)

Abstract

Nanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

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