Hostname: page-component-7c8c6479df-94d59 Total loading time: 0 Render date: 2024-03-19T11:19:28.637Z Has data issue: false hasContentIssue false

Electrical Properties of InN Grown by RF-MBE

Published online by Cambridge University Press:  17 March 2011

Yoshiki Saito
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Nobuaki Teraguchi
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Akira Suzuki
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Tomohiro Yamaguchi
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Tsutomu Araki
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Yasushi Nanishi
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Get access

Abstract

InN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mohammad, S.N. and Morcoc, H.: Prog. Quantum Electron. 20(1996)361.Google Scholar
2. Fortz, B.E., O'Leary, S.K., Shur, M.S. and Eastman, L.F.: J. Appl. Phys. 85(1999) 7727.Google Scholar
3. Tansley, T.L. and Foley, C.P.:J Appl. Phys. 59, (1986) 3241.Google Scholar
4. Ren, F., and Abernathy, C.R: Appl. Phys. Lett. 66(1995) 1503.Google Scholar
5. MacChesney, J.B., Bridenbaugh, P.M. and O'connor, P.B.:Mat. Res. Bull.Google Scholar
6. Kistenmacher, T.J. and Bryden, W.A.: Appl. Phys. Lett. 59 (1991)1844.Google Scholar
7. Yamaguchi, S., Kariya, M., Nitta, S., Takeuchi, T., Wetzel, C., Amano, H. and Akasaki, I.: J Appl. Phys. 85(1999) 7682.Google Scholar
8. Lu, H., Schaff, W.J., Hwang, J., Wu, H., Yeo, W., Pharkya, A. and Eastman, L.F.: Appl. Phys. Lett. 77(2000) 2548.Google Scholar