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Electrical Modelling of Ion-Damaged GaAs Schottky Barrier Interfaces

Published online by Cambridge University Press:  26 February 2011

E. D. Cole ,
S. Sen  and
L. C. Burton
E. D. Cole
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
S. Sen
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
L. C. Burton
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
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Abstract

Electrical measurements, including DLTS, I-V, C-V, and C and G versus temperature were carried out on aluminum Schottky diodes fabricated on Ion-etched GaAs surfaces. Fluence variations show little effect at 3keV ion energy, while a definite threshold can be seen at 0.5keV. A chemical etch before Schottky deposition Indicates diode parameter and EL2 deep level recovery after 1000Å removal at 3keV, and after only 100Å removal at 0.5keV. Computer analysis shows that these results are consistent with a previously reported model consisting of lumped R-C components attributable to a damaged and partly amorphous top layer, and to diffused bulk damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 593
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCE

1. Roberts, G. I. and Crowell, C. R., Sol. St. Elec. 16, 29 1973.CrossRefGoogle Scholar
2. Morante, J. R. et al., Sol. St. Elec. 26, 537 1983.CrossRefGoogle Scholar
3. Chekir, F. and Barret, C., Appl. Phys. Lett. 45, 1212 1984.CrossRefGoogle Scholar
4. Hattori, K., Ohtani, T. and Fugli, T., J. Appl. Phys. 59, 2507 1986.CrossRefGoogle Scholar
5. Feng, G. F. et al., 1987 Spring Meeting of Materials Research Soc., Anaheim, April 1987. (MRS Proceedings)Google Scholar
6. Sen, S. et al., 1987 Fall Meeting of Materials Research Soc., Boston, November 1987. (MRS Proceedings, at Press)Google Scholar
7. Ryssel, H. et al., Ion Implantation, Wiley, Chlchester, 1986, p. 193.Google Scholar