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Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

Published online by Cambridge University Press:  01 February 2011

Jingyu Hyeon-Lee ,
Jihoon Rhee ,
Jungbae Kim ,
Jin-Heong Yim  and
Seok Chang
Jingyu Hyeon-Lee
Affiliation:
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
Jihoon Rhee
Affiliation:
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
Jungbae Kim
Affiliation:
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
Jin-Heong Yim
Affiliation:
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
Seok Chang
Affiliation:
Electronic Materials Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea
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Abstract

Low dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E8.3
Copyright
Copyright © Materials Research Society 2003

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