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Electrical isolation of p-type GaAsN epitaxial layers by ion irradiation

Published online by Cambridge University Press:  11 February 2011

Q. Gao ,
J. Muller ,
P. N. K. Deenapanray ,
H. H. Tan  and
C. Jagadish
Q. Gao
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia E-mail: gao109@rsphysse.anu.edu.au
J. Muller
Affiliation:
FIUPSO, Université Paris Sud Orsay, Maison de l'ingénieur, 91400 Orsay, France
P. N. K. Deenapanray
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia E-mail: gao109@rsphysse.anu.edu.au
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia E-mail: gao109@rsphysse.anu.edu.au
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia E-mail: gao109@rsphysse.anu.edu.au
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Abstract

The evolution of sheet resistance (Rs) of p-type conductive GaAs(1-x)Nx epilayers (x = 0.6%, 1.4%, and 2.3%) exposed to MeV 1H+, 7Li+, 12C+, and 16O+ ions and the stability of the formed electrical isolation during post-irradiation annealing were investigated. Results show that the threshold dose (Dth) to convert a conductive layer to highly resistive one close-to-linearly depends on original free carrier concentration and inversely depends on the number of irradiation-generated atomic displacements, and is independent of the nitrogen content in GaAsN layers. Increasing beam flux of 12C+ results in a lower Dth, whereas 1H+ beam flux does not affect it, showing the influence of collision cascade density. Results also show that irrespectively of the ion mass, the stability of electrical isolation formed in GaAsN is dependent on the ratio of the concentration of irradiation-created carrier traps to Dth. The electrical isolation can be preserved up to 550°C when the accumulated dose (D) is greater than 3.3 Dth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.8
Copyright
Copyright © Materials Research Society 2003

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References

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