Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-19T07:11:03.687Z Has data issue: false hasContentIssue false
  • English
  • Français

The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects

Published online by Cambridge University Press:  01 February 2011

Donghun Choi ,
Maitri Warusawithana ,
Chi On Chui ,
Joseph Chen ,
Wilman Tsai ,
Darrell G. Schlom  and
James S. Harris
Donghun Choi
Affiliation:
donghun.choi@stanford.edu, Stanford University, Electrical Engineering, 126X Via Ortega, Stanford, CA, 94305, United States, 650-725-8313, 650-723-4659
Maitri Warusawithana
Affiliation:
maitriw@gmail.com, Pennsylvania State University, Materials Science and Engineering, University Park, PA, 16802-5005, United States
Chi On Chui
Affiliation:
chui@ee.ucla.edu, University of California, Los Angeles, Electrical Engineering, Los Angeles, CA, 90095, United States
Joseph Chen
Affiliation:
jptchen@stanford.edu, Stanford University, Materials Science and Engineering, Stanford, CA, 94305, United States
Wilman Tsai
Affiliation:
wilman.tsai@intel.com, Intel Corporation, Santa Clara, CA, 95052, United States
Darrell G. Schlom
Affiliation:
schlom@ems.psu.edu, Pennsylvania State University, Materials Science and Engineering, University Park, PA, 16802-5005, United States
James S. Harris
Affiliation:
harris@snow.stanford.edu, Stanford University, Electrical Engineering, Stanford, CA, 94305, United States
Get access

Abstract

The electrical properties of Al/LaAlO3/GaAs metal-oxide-semiconductor capacitors were investigated. A thick arsenic (As2) capping layer was used to protect the GaAs from oxidation and contamination during the air exposure that occurred between the deposition of the GaAs and LaAlO3 layers in different molecular-beam epitaxy systems. Amorphous LaAlO3 was deposited on c(4×4)- and (2×4)-reconstructed (100) GaAs surfaces. Post dielectric deposition annealing was found to improve the capacitance-voltage (C-V) characteristics by eliminating frequency dispersion in the depletion and weak inversion regimes and diminished the bi-directional C-V hysteresis to 210 mV. Reasonably low gate leakage current was maintained after annealing.

Keywords

GaLaannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H05-31
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Spicer, W. E., Chye, P., Skeath, P., Su, C. Y., and Lindau, I., “Nature of interface states at III-V insulator interfaces”, Inst. Phys. Conf. Ser. 50, 216 (1980).Google Scholar
2. Spicer, W. E., Lindau, I., Skeath, P., Su, C. Y., and Chye, P., “Unified defect model and beyond”, J. Vac. Sci. Technol. 17, 1019 (1980).Google Scholar
3. Chang, R. P. H., Sheng, T. T., Chang, C. C., and Coleman, J. J., “The effect of interface arsenic domains on the electrical properties of GaAs MOS structures”, Appl. Phys. Lett. 33, 341 (1978).Google Scholar
4. Passlack, M., Hong, M., Mannaerts, J. P., Opila, R. L., Chu, S. N. G., Moriya, N., Ren, F., and Kwo, J. R., “Low Dit, thermodynamically stable Ga2O3 -GaAs interfaces: fabrication, characterization, and modeling”, IEEE Trans. Electron Devices 44, 214 (1997).Google Scholar
5. Ye, P. D., Wilk, G. D., Kwo, J., Yang, B., Gossmann, H.-J. L., Frei, M., Chu, S. N. G., Mannaerts, J. P., Sergent, M., Hong, K. K. N. M., and Bude, J., “GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition”, IEEE Trans. Electron Devices 24, 209 (2003).Google Scholar
6. Morais, J., Miotti, L., Soares, G. V., Teixeira, S. R., Pezzi, R., Bastos, K. P., Baumvol, I. J. R., Baumvol, A. L. P. R., Chambers, J. J., Visokay, M. R., and Colombo, L., “Integrity of hafnium silicate/silicon dioxide ultrathin films on Si”, Appl. Phys. Lett. 81, 2995 (2002).Google Scholar
7. Edge, L. F., Schlom, D. G., Chambers, S. A., Cicerrella, E., Freeouf, J. L., Hollander, B., and Schubert, J., “Measurement of the band offsets between amorphous LaAlO3 and silicon”, Appl. Phys. Lett. 84, 726 (2004).Google Scholar
8. Edge, L. F., Schlom, D. G., Sivasubramani, P., Wallace, R. M., Hollander, B., and Schubert, J., “Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon”, Appl. Phys. Lett. 88, 112907 (2006).Google Scholar
9. Karpov, I., Venkateswaran, N., Bratina, G., Gladfelter, W., Franciosi, A., and Sorba, L., “Arsenic cap layer desorption and the formation of GaAs(001 )c(4x4) surfaces”, J. Vac. Sci. Technol. B 13, 2041 (1995).Google Scholar
10. Nicollian, E. H. and Brews, J. R., “MOS (Metal Oxide Semiconductor) Physics and Technology”, (Wiley, New York, 2003), p. 197.Google Scholar