Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T21:11:23.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Metal Contacts on Diamond Thin Films

Published online by Cambridge University Press:  26 February 2011

Dario Narducci ,
Jerome J. Cuomo ,
C. Richard Guarnieri  and
Stanley J. Whitehair
Dario Narducci
Affiliation:
IBM World Trade Post-Doctoral Fellow
Jerome J. Cuomo
Affiliation:
IBM Research Division, T. J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
C. Richard Guarnieri
Affiliation:
IBM Research Division, T. J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
Stanley J. Whitehair
Affiliation:
IBM Research Division, T. J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
Get access

Abstract

Polycrystalline boron-doped diamond thin films were prepared by microwave-enhanced plasma-assisted chemical vapor deposition. Ti, V, Ta, Nb, Al, Mo and W contacts were prepared by physical vapor deposition and their behavior was studied as a function of the annealing temperature, atmosphere and duration. For Ti contacts, short heat treatments (less than 60 minutes) at 500 °C under argon atmosphere were found to make ohmic contacts for applied voltages up to 50 V. Longer annealing times, more reactive atmospheres, and higher temperatures degraded the contact characteristics. In order to obtain a more complete picture of the interface structure, the capacitance-voltage characteristics and the impedance spectra of the systems were measured between 10 K and 1000 K. The interface contribution to the overall dielectric behavior of the system shows much shallower depletion widths in Ti-diamond (ohmic) contacts than with the non-linear Nb and Ta contacts. The higher values of the contact resistance and the shallower depletion width with Ti can be explained in terms of formation of a thin carbide-like region at the metalsemiconductor interface. The space-charge region width as well as the distribution of localized states in the band gap were also determined. The effect of the microstructure on the electrical properties of the systems is discussed in comparison with the behavior of metal-contacts on single-crystal diamonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 333
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFRENCES

1. Hicks, M.C., Wronski, C.R., Grot, S.A., Gildenblat, G.Sh., Badzian, A.R., Badzian, T. and Messier, R., J. Appl. Phys. 65, 2139 (1989).Google Scholar
2. Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A. and Lindley, W.T., IEEE Electron Device Lett. 8, 341 (1987).Google Scholar
3. Prins, J.F., Appl. Phys. Lett. 15, 950 (1982).Google Scholar
4. Efremow, N.N., Geis, M.W., Flanders, D.C., Lincoln, G.A. and Economou, N.P., J. Vac. Sci. Technol. B 3, 416 (1985).Google Scholar
5. Gildenblat, G.Sh., Grot, S.A., Wronski, C.R., Badzian, A.R., Badzian, T. and Messier, R., Appl. Phys. Lett. 53, 586 (1988).Google Scholar
6. Prins, J.F., Phys. Rev. B 39, 3764 (1989); Nucl. Instr. Methods Phys. Res. B 35, 484 (1988); Phys. Rev. B 38, 5576 (1988).Google Scholar
7. Braunstein, G. and Kalish, R., J. Appl. Phys. 54, 2106 (1983).Google Scholar
8. Okano, K., Naruki, H., Akiba, Y., Kurosu, T., lida, M., Hirose, H. and Nakamura, T., Japan. J. Appl. Phys. (Regul. Pap. Short Notes) 28, 1066 (1989).Google Scholar
9. Moazed, K. L, Nguyen, R. and Zeidler, J.R., IEEE Electron Device Lett. 9, 350 (1988).Google Scholar
10. Moazed, K.L., Zeidler, J.R., in Power Converter Handbook, (Intertec Communications Inc, New York, 1989), in press.Google Scholar
11. Vavilov, V.S., Gippius, A.A. and Ye.Konorova, A., Electronic and Optical Processes in Diamond, (Nauka Publ. House, Moscow, 1985), pp. 27–36.Google Scholar
12. Chrenko, R.M., Phys. Rev. B 7, 4560 (1973).Google Scholar
13. Rose, A., Phys. Rev. 97, 1538 (1955).Google Scholar
14. Lampert, M.A. and Mark, P., Current Injection in Solids, (Academic Press, New York, 1970), pp. 45–111.Google Scholar
15. Smith, R.W. and Rose, A., Phys. Rev. 97, 1531 (1955).Google Scholar
16. Smith, R.W., Phys. Rev. 97, 1525 (1955).Google Scholar
17. Ashock, S., Borrego, J.M. and Gutmann, R.J., J. Appl. Phys. 51, 1076 (1980).Google Scholar
18. Ashock, S., Srikanth, K., Badzian, A., Badzian, T. and Messier, R., Appl. Phys. Lett. 50, 763 (1987).Google Scholar
19. Roberts, G.I. and Crowell, C.R., J. Appl. Phys. 41, 1767 (1970).Google Scholar
20. Glover, G.H., Solid State Electr. 16, 973 (1973).Google Scholar