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Electrical Characterization of Isotype n-ZnO/n-GaN Heterostructures

Published online by Cambridge University Press:  01 February 2011

Yahya Alivov ,
Xiao Bo ,
Sena Akarca-Biyikli ,
Fan Qian ,
Daniel Johnstone ,
Olena Lopatiuk-Tirpak ,
Leonid Chernyak ,
Cole Litton  and
Hadis Morkoç
Yahya Alivov
Affiliation:
yialivov@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Xiao Bo
Affiliation:
xiaob@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Sena Akarca-Biyikli
Affiliation:
nbiyikli@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Fan Qian
Affiliation:
fanq@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Daniel Johnstone
Affiliation:
djohnstone@semetrol.com, SEMETROL, Chesterfield, VA, 23838, United States
Olena Lopatiuk-Tirpak
Affiliation:
lopatiuk@physics.ucf.edu, University of Central Florida, Physics Department, Orlando, FL, 32816, United States
Leonid Chernyak
Affiliation:
chernyak@physics.ucf.edu, University of Central Florida, Physics Department, Orlando, FL, 32816, United States
Cole Litton
Affiliation:
cole.litton@sbcglobal.net, Air Force Research Laboratory-retired (AFRL/MLPS), Dayton, OH, 45433, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
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Abstract

Electrical properties of n-ZnO/n-GaN isotype heterostructures obtained by rf-sputtering of ZnO films on GaN layers grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the n-ZnO/n-GaN diodes revealed highly rectifying behavior with forward and reverse currents ∼1.43×10-2 A/cm2 and ∼2.4×10-4 A/cm2, respectively, at ±5 V. From the Arrhenius plot built using temperature dependent current-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 mm, depending on excitation conditions. The temperature dependent EBIC measurements yielded an activation energy of 0.462 ± 0.073 V.

Keywords

II-VIIII-Vscanning electron microscopy (SEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-16
Copyright
Copyright © Materials Research Society 2007

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References

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