Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T12:09:52.110Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Defects in GaAs Grown on Si by MBE

Published online by Cambridge University Press:  28 February 2011

N. Chand ,
R. Fischer ,
A. M. Sergent ,
D. V. Lang  and
A. Y. Cho
N. Chand
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. Fischer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. M. Sergent
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. V. Lang
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
A. Y. Cho
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

We show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new electron deep levels in the upper half of the bandgap in spite of the dislocations and other defects in the material. As shown by Au-GaAs Schottky contacts, the defects are unnoticeable when the device is forward biased but become very active in reverse biased condition, causing large leakage current and low breakdown voltage (although the device is still acceptable for many applications, especially FET's). The defects become more active after hydrogenation and more inactive after a post-growth rapid thermal annealing (RTA). Performance of devices made on thermally annealed GaAs on Si is comparable to those of GaAs on GaAs. Also, following the application of a large- current the device behavior improves, indicating a self-annealing action as a result of internal heating. The reverse current in the as-grown material shows a very weak temperature dependence, indicating its origin is not thermionic emission or carrier generation. It is speculated that a large part of the leakage current in the as-grown GaAs on Si is due to the defect assisted tunneling. After RTA, the average spacing between defect clusters increases, thus reducing the tunneling probability and tremendously improving the device characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 233
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Read, W. T., Dislocations in Crystals (McGraw-Hill Book Company, New York, 1953), pp. 7–8.Google Scholar
[2] Chand, N., Allam, J., Gibson, J. M., Capasso, F., Beltram, F., Macrander, A. T., Hutchinson, A. L., Hopkins, L. C., Bethea, C. G., Levine, B. F. and Cho, A. Y., J. Vac. Sci. Technol. B5, May/June (1987).Google Scholar
[3] Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., and Cho, A. Y., Appl. Phys. Lett. 49, 815 (1980).Google Scholar
[4] Pearton, S. J., Wu, C. S., Stavola, M., Ren, F., Lopata, J., Vernon, S. M., Haven, V. E., and Smith, W. C. D., Presented at the 1987 MRS Spring Meeting, Anheim, CA (these proceedings).Google Scholar
[5] Lee, J. W., Paper H7 presented at the 15th International Symposium on GaAs and Related Compounds, Sept. 28-Oct. 1, 1986, Las Vegas, Nevada.Google Scholar
[6] Nabity, J. C., Stavola, M., Lopata, J., Smith, W. C. D., Tu, C. W. and Pearton, S. J. Appl. Phy. Lett. 50, 921 (1987).Google Scholar
[7] Rhoderick, E. H., Metal-Semiconductor Contacts (Clarendon, Oxford, 1977).Google Scholar
[8] Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
[9] Waldrop, J. R., Appl. Phys. Lett. 44, 1002 (1984).Google Scholar
[10] Sze, S. M., Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981), p. 101.Google Scholar
[11] Lee, J. W., Schichijo, H., Tsai, H. L., and Matyi, R. J., Appl. Phys. Lett. 50, 31 (1986).Google Scholar
[12] Lang, D. V., Cho, A. Y., Gossard, A. C., Ilegems, M., and Wiegmann, S., J. Appl. Phys. 47, 2558 (1976).Google Scholar
[13] Martin, G. M. and Makram-Ebeil, S., in Deep Centers in Semiconductors, ed. Pantelides, S. T. (Gordan and Breach, N.Y., 1986), p. 399.Google Scholar