Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T10:00:43.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Aluminum Nitride Films on Silicon Grown by Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

A. H. Khan ,
J. M. Meese ,
T. Stacy ,
E. M. Charlson ,
E. J. Charlson ,
G. Zhao ,
G. Popovici  and
M. A. Prelas
A. H. Khan
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
J. M. Meese
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
T. Stacy
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
E. M. Charlson
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
E. J. Charlson
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
G. Zhao
Affiliation:
Electrical and Computer Engineering, University of Missouri, Colombia, MO 65211
G. Popovici
Affiliation:
Nuclear Engineering, University of Missouri, Columbia, MO 65211.
M. A. Prelas
Affiliation:
Nuclear Engineering, University of Missouri, Columbia, MO 65211.
Get access

Abstract

Aluminum nitride (AlN) films were grown on silicon (Si) substrates by chemical vapor deposition (CVD). The films were characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD). The refractive index of the AlN films was determined by ellipsometry. Current-voltage and current-temperature characteristics were performed on metal-AlN-p+ Si structures with Pt, Au and Al as metal electrodes. The characteristics showed that at high field and high temperature the carrier conduction mechanism in the film was dominated by Frenkel-Poole emission. The relative dielectric constant of the AlN films was estimated to be 9.66+0.3 from capacitance-voltage-frequency (C-V-f) measurements on Au-AlN-p+ Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 637
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Khan, A. H., Odeh, M. F., Meese, J. M., Charlson, E. M., Charlson, E. J., Stacy, T., Popovici, G., Prelas, M. A., and Wragg, J. L., accepted for publication in J. Mater. Sci. Google Scholar
2. ASTM card 25–1133.Google Scholar
3. Pastrnak, J. and Roskovcova, L., Phys. Stat. Soi., 14, K5 (1966).Google Scholar
4. Bauer, J., Biste, L., and Bolze, D., Phys. Stat. Sol., A 39, 173 (1977).Google Scholar
5. Sze, S. M., Physics of Semiconductor Devices, (J. Wiley Publishers, India, 1986), chapter 7.Google Scholar
6. Collins, A. T., Lightowlers, E. C., and Dean, P. J., Phys. Rev., 158, 833 (1967).Google Scholar