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Electrical Behavior of Spin-on Silicon Dioxide (SOX) in a Metal-Oxide-Semiconductor Structure

Published online by Cambridge University Press:  25 February 2011

N. Lifshitz ,
G. Smolinsky  and
J. M. Andrews
N. Lifshitz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–2070
G. Smolinsky
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–2070
J. M. Andrews
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974–2070
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Abstract

We studied the behavior of mobile charges, which we believe are hydrogen ions, in a novel spin-on oxide, SOX. Our analysis is based on the Triangular Voltage Sweep (TVS) technique, which is normally used to detect the presence of mobile alkali ions in silicon dioxides. We found that the TVS traces of protons exhibit several unique features that allow us to distinguish a proton signal from that of other common contaminants, such as sodium. We suggest a model to explain these unique features. We show that the presence of hydrogen in the SOX material is due to the high water retention of this porous oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 575
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Kuhn, M. and Silversmith, D. J., J. Electrochem. Soc., 118, 966 (1971).Google Scholar
2. Smolinsky, G. and Ryan, V., in “Chemical Perspectives of Microelectronic Materials,” edited by Gross, M.E., Yates, J.T. Jr, and Jasinski, J. (Mater. Res. Soc. Proc. 131, Pittsburgh, PA 1989) this issue.Google Scholar
3. Nicollian, E. H. and Brews, J. R., MOS Physics and Technology, (Wiley Interscience Publication, New York, 1982), p 597.Google Scholar
4. Hofstein, S. R. IEEE Trans. Electron Devices, ED-13, 222 (1966).Google Scholar
5. Hetherington, G., Jack, K. H., and Ramsay, M. W., J. Phys. Chem. Glasses, 6, 6 (1965).Google Scholar
6. Sun, R. C., Clemens, J. T. and Nelson, J. T., 18th Annual Proceedings, Reliability Physics 1980, p. 244Google Scholar