Skip to main content Accessibility help
×
Home

The Electrical Behavior of Pd/AIN/Semiconductor Thin Film Hydrogen Sensing Structures

  • L. Rimai (a1), M.H. Rahman (a2), E.F. McCullen (a3), L. Zhang (a1), J.S. Thakur (a1), R. Naik (a3), G. M. Newaz (a4), K.Y.S. Ng (a2), R.J. Baird (a1) and G.W. Auner (a1)...

Abstract

The device on Si substrates behaves as an MIS capacitor and the response to hydrogen is given by a shift of the capacitance vs. bias profile along the bias voltage axis, whereas the device on SiC behaves as a rectifying diode and the presence of hydrogen causes a shift of the forward current vs. voltage plot. The relatively large forward current, in both cases, indicates that there is measurable electrical transport across the AlN layer, but at the same temperature the turn on bias is different. Either structure contains two rectifying contacts in series, namely a Schottky contact between Pd and AlN and a heterojunction between AlN and the substrate.

Copyright

References

Hide All
1. Samman, A. et al. J. Appl. Phys, Vol 87, pg 3101, (2000)
2. Serina, F. et al. . Appl. Phys. Letters Vol 79, pg 3350, (2001)
3. McCullen, E.F. et al. . J. Appl. Phys. Vol 93, pg 5757 (2003)
4. McCluskey, M. D. et al. . Phys. Rev. Letters Vol 80, pg 4008 (1998)
5. Anderson, R.L., Solid State Electronics, Vol 5 pg 341 (1962)
6. Sze, S. M., Physics of Semiconductor Devices, Second Ed. Section 2.8, Wiley-Interscience (1981)

The Electrical Behavior of Pd/AIN/Semiconductor Thin Film Hydrogen Sensing Structures

  • L. Rimai (a1), M.H. Rahman (a2), E.F. McCullen (a3), L. Zhang (a1), J.S. Thakur (a1), R. Naik (a3), G. M. Newaz (a4), K.Y.S. Ng (a2), R.J. Baird (a1) and G.W. Auner (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed