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Electrical and Structural Properties of Ta-doped SnO2 Transparent Conductive Thin Films by Pulsed Laser Deposition

  • Shoichiro Nakao (a1) (a2), Naoomi Yamada (a3), Yasushi Hirose (a1) (a2) (a4) and Tetsuya Hasegawa (a1) (a2) (a4)

Abstract

We investigated electrical and structural properties of Ta-doped SnO2 (TTO) films on anatase TiO2 seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO2 seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highest μ of 83 cm2V-1s-1 [resistivity (ρ) of 2.8 × 10-4 Ωcm] and the lowest ρ of 1.8 × 10-4 Ωcm (μ of 60 cm2V-1s-1) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO2 seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.

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