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Electrical and Photoluminescence Properties of Mg+ and C+ Implanted Acceptors in InP.

  • A.C. Beye (a1), A. Yamada (a1), A. Shimizu (a2), H. Shibata (a1), H. Tanoue (a1), K.M. Mayer (a1), H. Sugiyama (a1), K. Kamijoh (a3), T. Oda (a4), O. Arriga (a4), I. Akiyama (a5), N. Kutsuwada (a5), T. Matsumori (a6), S. Uekusa (a2) and Y. Makita (a1)...

Abstract

Implantation of Mg+ and C+ ions is carried out in bulk InP substrates using single or several energies up to 400 keV. The net carrier concentration profile at 300K is measured by capacitance-voltage (C-V) method. The ground and excited states binding energies of Mg and C acceptors are determined by low-temperature selective excitation of photoluminescence (PL). Additional sharp exciton-Iike emissions are detected after annealing of the samples. Their intensity is found to decrease with increasing Mg+ or C+ dose. Annealing-induced activation and/or formation of complex defect are the likely candidate mechanisms for the involved defect.

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1 Nagai, H. and Noguchi, Y., Appl. Phys. Lett. 29, 740 (1976).
2 Shen, C.C., Hsieh, J.J., and Lind, T.A., Appl. Phys. Lett. 30, 353 (1977).
3 Dutta, N.K., Vessel, T., Olsson, N.A., Logan, R.A., Koszi, L.A., and Yen, R., Appl. Phys. Lett. 46, 525 (1985).
4 Dutta, N.K., Napholtz, S.G., Yen, R., Vessel, T., Shen, T.M., and Olsson, N.A., Appl. Phys. Lett. 46, 1036 (1985).
5 Williams, E.W., Elder, W., Astles, M.G., Webb, M., Mullin, J.B., Sraughan, B., and Tufton, P.J., J. Electrochem. Soc. 120, 1741 (1973).
6 Hess, K., Stath, N., and Benz, K.W., J. Electrochem. Soc. 121, 1208 (1974).
7 Dean, P.J., Robbins, D.J., and Bishop, S.G., J. Phys. C12, 5567 (1979).
8 Dean, P.J., Robbins, D.J., and Bishop, S.G., Solid State Commun. 32, 379 (1979).
9 Pomrenke, G.S., Reynolds, D.C., and Park, Y.S., J. Lumin. 24/25, 189 (1981).
10 Skromme, B.J., Stillman, G.E., Oberstar, J.D., and Chan, S.S., Appl. Phys. Lett. 44, 319 (1984).
11 Dean, P.J. and Skolnick, M.S., J. Appl. Phys. 54, 346 (1983).
12 White, A.M., Dean, P.J., Taylor, L.L., Clarke, R.C., Ashen, P.J., and Mullin, J.B., J. Phys. C5, 1727 (1972).
13 Cheng, T.S., Airaksinen, V.M., and Stanley, C.R., J. Appl. Phys. 64, 6662 (1988).
14 Beye, A.C., Yamada, A., Kamijoh, T., Tanoue, H., Mayer, K.M., Ohnishi, N., Shibata, H. and Makita, Y., Appl. Phys. Lett. Vol.56, No.4 (Jan.22,1989).
15 Dean, P.J., White, A.M., Williams, E.W. and Astles, M.G., Solid State Commun. 9, 1555 (1971).
16 Frandon, J., Fabre, F., Bacquet, G. and Reynaud, F., J. Appl. Phys. 59, 1627(1986)
17 Kim, T.S., Lester, S.D. and Streetman, B.G., J. Appl. Phys. 61, 4598 (1987).
18 Shimakura, H., Kainosho, K., Inoue, T., Yamanoto, H. and Oda, O., in Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, Yokohama 1989, Japan (to be published).

Electrical and Photoluminescence Properties of Mg+ and C+ Implanted Acceptors in InP.

  • A.C. Beye (a1), A. Yamada (a1), A. Shimizu (a2), H. Shibata (a1), H. Tanoue (a1), K.M. Mayer (a1), H. Sugiyama (a1), K. Kamijoh (a3), T. Oda (a4), O. Arriga (a4), I. Akiyama (a5), N. Kutsuwada (a5), T. Matsumori (a6), S. Uekusa (a2) and Y. Makita (a1)...

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