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Electrical and Optical Properties of Defects by Complementary Spectroscopies

  • A. Castaldini (a1), A. Cavallini (a1), P. Fernandez (a2), B. Fraboni (a1), J. Piqueras (a2) and L. Polenta (a1)...

Abstract

Deep levels in II-VI compounds were investigated by complementary junction and optical spectroscopy methods to assess the characteristics of the traps as well as the limits and the reliability of the techniques applied. The electrical properties have been investigated by current and capacitance transient spectroscopy, while the optical properties have been studied by cathodoluminescence. A critical and comparative analysis of the results obtained with the various methods allowed the determination of the parameters and the nature (majority or minority carrier trap) of most of the detected levels.

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Electrical and Optical Properties of Defects by Complementary Spectroscopies

  • A. Castaldini (a1), A. Cavallini (a1), P. Fernandez (a2), B. Fraboni (a1), J. Piqueras (a2) and L. Polenta (a1)...

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