Skip to main content Accessibility help
×
Home

Electrical and Microwave Properties of Mn Implanted (Ba,Sr)TiO3 Thin Films

  • J. D. Baniecki (a1) (a2), R. B. Laibowitz (a2), T. M. Shaw (a2), P. R. Duncombe (a2), D. A. Neumayer (a2), M. Cope (a2), D.E Kotecki (a3), H. Shen (a4) and Q. Y. Ma (a1)...

Abstract

We have used ion implantation to dope polycrystalline BaxSr(1−x)TiO3 (BST) thin films with Mn. Dopant concentrations were varied in the range of 0.1 at % to 2 at % Mn. X-ray diffraction and TEM studies show that the implantation process significantly damages the film leaving only short range order, but subsequent rapid thermal annealing heals the damage. The effect of the different Mn dopant concentrations on the electrical properties of the complex capacitance, relaxation currents, leakage, C-V, and resistance degradation was investigated. Our initial results show that the implanted films have significantly lower leakage (up to a factor of 10 lower) than the as deposited films for small (<0.5 at % Mn) implantation doses. The capacitance decreased with increasing Mn concentration while the relaxation currents and loss tangents increased.

Copyright

References

Hide All
[1] Kotccki, D.E., Integrated Ferroelectrics, Vol. 16, 1 (1997)
[2] De Flaviis, F., Alexopoulos, N.G., Stafsudd, O.M., IEEE Trans. Microwave Theory Tech. Vol. 45, No. 6, 963 (1997)
[3] Babbitt, , Koscica, T., Drach, W., Didomenico, L., Integrated Ferroelectrics, Vol. 8, No.1–2, 65 (1995)
[4] Hofman, W., Hoffmann, S., Waser, R., Thin Solid Films, 305, 6673 (1997)
[5] Buskirk, Van, Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan) Vol. 35, No. 4B, 2520 1996
[6] Neumayer, , Duncombe, P.R., Laibowitz, R., and Grill, A., ISIF Conference proceedings, March, 1997, Santa Fe, New Mexico
[7] Baniecki, J.D., Eaibowitz, R.B., Shaw, T.M., Duncombe, P.R., Neumayer, D.A., Kotecki, D.E., Shen, H., Ma, Q.Y., Appl. Phys. Lett., Jan. 26, 1998
[8] Schumacher, M., Dietz, G.W., Waser, R. Integrated Ferroelectrics, Vol. 10, 231 (1995)
[9] Baniecki, J.D., Laibowitz, R.B. and Shaw, T.M., Unpublished results
[10] Jonscher, A.K., “Dielectric Relaxation in Solids”, (Chelsea Dielectrics Press, London, 1983).
[11] Basceri, C., Streiffer, S.K., Kingon, A.I., Waser, R., J. Appl. Phys. 82(5), 1 Sept. (1997)

Electrical and Microwave Properties of Mn Implanted (Ba,Sr)TiO3 Thin Films

  • J. D. Baniecki (a1) (a2), R. B. Laibowitz (a2), T. M. Shaw (a2), P. R. Duncombe (a2), D. A. Neumayer (a2), M. Cope (a2), D.E Kotecki (a3), H. Shen (a4) and Q. Y. Ma (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed