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Electrical and Microstructural Properties of Lead Titanate Thin Films Deposited by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

M. Vellaikal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C 27695–7907.
A. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C 27695–7907.
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Abstract

Lead titanate thin films were deposited on Pt(111)/Ti/SiO2/Si(100) and RuO2/SiO2/Si(100) substrates using metalorganic chemical vapor deposition (MOCVD). Atomic force microscopy revealed that films on ruthenium oxide were rougher than films on platinum. Also the grain size of the film on ruthenium oxide was larger than that on platinum. X-ray analysis revealed that the preferred orientations for films on platinum and ruthenium oxide were different. Hysteresis and fatigue tests were performed to evaluate capacitor structures on these substrates. Films on RuO2 had lower coercive fields than films on platinum. Comparison of polycrystalline and oriented films on platinum indicated that the oriented films were easier to switch and fatigued at a slower rate than the polycrystalline films. But long term property (fatigue, imprint) testing on lead titanate resulted in resistance degradation of these contacts, unlike PZT films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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