Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-23T18:01:18.922Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Electrochemical Properties of a-C:N:H Films

Published online by Cambridge University Press:  10 February 2011

Yu.V. Pleskov ,
M.D. Krotova ,
V.I. Polyakov ,
A.V. Khomich ,
A.I. Rukovishnikov ,
B.L. Druz  and
I. Zaritskiy
Yu.V. Pleskov
Affiliation:
Frumkin Institute of Electrochemistry, Leninsky prospect 31, Moscow 117071, Russia, pleskov@electrochem.msk.ru
M.D. Krotova
Affiliation:
Frumkin Institute of Electrochemistry, Leninsky prospect 31, Moscow 117071, Russia, pleskov@electrochem.msk.ru
V.I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, pvi@aha.ru
A.V. Khomich
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, pvi@aha.ru
A.I. Rukovishnikov
Affiliation:
Institute of Radio Eng. & Electronics, Mohovaya 11, Moscow 103907, Russia, pvi@aha.ru
B.L. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, bdruz@worldnet.att.net
I. Zaritskiy
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, bdruz@worldnet.att.net
Get access

Abstract

Electrochemical impedance in H2SO4 solutions and kinetics of redox reactions in the Fe(CN)63-/4- system were studied on amorphous nitrogenated diamond-like carbon (a-C:N:H) thin-film electrodes. Parameters of point defects (trapping centers) were also measured by the Deep Level Transient Spectroscopy techniques. The films have been fabricated on p- and i-type silicon and quartz substrates, using direct ion beam deposition from an RF inductively coupled N2+ CH4 plasma source. The increase in N2/CH4 ratio in the gas mixture lead to a decrease in the electrical resistivity and optical bandgap of the films from 3×1010to 5×106 Ω cm and from 1.3 to 0.6 eV, respectively. Simultaneously, the concentration of electrically active point defects increased significantly and the charge transfer at the a-C:N:H film/redox electrolyte interface was facilitated

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 439
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yoo, K., Miller, B., Kalish, R., Shi, X., Electrochem. and Solid-State Lett. 2, 233 (1999).Google Scholar
2. Druz, B.L., Ostan, E., Distefano, S., Hayes, A., Kanarov, V., Polyakov, V., Rukovishnikov, A., Rossukanyi, N., Khomich, A., Diamond and Related Mater. 7, 965 (1998).Google Scholar
3. Krotova, M.D., Evstefeeva, Yu.E., Pleskov, Yu.V., Elkin, V.V., Baranov, A.M., Elektrokhimiya 34, 1039 (1998).Google Scholar
4. Polyakov, V.I., Rossukanyi, N.M., Rukovishnikov, A.I., Pimenov, S.M., Karabutov, A.V., Konov, V.I., J. Appl. Phys. 84, 2882 (1998).Google Scholar
5. Pleskov, Yu.V., Evstefeeva, Yu.E., Krotova, M.D., Elkin, V.V., Baranov, A.M., Dement'ev, A.P., Diamond and Related Mater. 8, 64 (1999).Google Scholar
6. Delahay, P.. New Instrumental Methods in Electrochemistry. New York: Interscience Publishers, Inc., 1954, Chap. 6.Google Scholar
7. Pleskov, Yu.V., Uspekhi Khimii 68, 419 (1999).Google Scholar
8. Pleskov, Yu.V., Gurevich, Yu.Ya.. Semiconductor Photoelectrochemistry. N.Y.: Consultants Bureau, 1986.Google Scholar
9. Silva, S.R.P., Robertson, J., Amaratunga, G.A.J., Rafferty, B., Brown, L.M., Schwan, J., Franceschini, D.F., Mariotto, G., J. Appl. Phys. 81, 2626 (1997).Google Scholar