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Electric Degradation and Defect Formation of Silicon Due to Cu, Fe, and Ni Contamination

Published online by Cambridge University Press:  03 September 2012

Shunta Naito  and
Tsuneo Nakashizu
Shunta Naito
Affiliation:
NSC Electron Corporation, Hikari, Yamaguchi, Japan
Tsuneo Nakashizu
Affiliation:
Nippon Steel Corporation, Hikari, Yamaguchi, Japan
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Abstract

Electric degradation of silicon wafer due to Cu, Fe, and Ni contamination has been studied using MCZ with low oxygen and CZ wafers. In the cases of Cu and Ni contamination, the electric properties depended on the characteristics of the starting wafers,. especially the type of conductance. The behavior of these metals in the low temperature region played an important role to understand the electric properties. On the contrary, no difference between p- and n-type wafers was observed in Fe contamination in our experiment.

The surface defects were observed with high density in the MCZ wafers in Cu contamination. These defects were sensitive to the degradation of the MOS C-t generation lifetime. Making use of this relation, the efficiency of the extrinsic gettering was evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 641
Copyright
Copyright © Materials Research Society 1992

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References

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