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Effects of Various Types of Doping on the Electronic Structure of Organic Interfaces

Published online by Cambridge University Press:  01 February 2011

Kazuhiko Seki
Affiliation:
Research Center for Materials Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan Research Institute for Advanced Research, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan
Toshio Nishi
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan
Senku Tanaka
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan
Tadanobu Ikame
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan
Hisao Ishii
Affiliation:
Research Institute for Electro Communication, Katahira, Aoba-ku, Sendai 980-8577, Japan
Kaname Kanai
Affiliation:
Department of Chemistry, Graduate School of Science, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8602, Japan
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Abstract

In various organic electronic devices, interfaces formed by organic layers can play important roles. We have been studying various organic interfaces for clarifying their structure and electronic structure. In this talk, we will report our recent study of the effect of various types of doping for a variety of dopants – residual impurity, atmospheric gases, and metallic and organic intentional dopants. In particular, detailed and quantitative information about the effect of oxygen from the viewpoint of electronic structure was obtained for titanyl phthalocyanine (TiOPc), and the results corresponded well with the recent report of atmospheric effect on orga nic field effect transistor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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