Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-16T18:36:55.085Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of thermal annealing in the properties of PECVD a-SiC layers

Published online by Cambridge University Press:  17 March 2011

L.F. Marsal ,
J. Pallares ,
A. Orpella ,
D. Bardés ,
J. Puigdollers  and
R. Alcubilla
L.F. Marsal
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
J. Pallares
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
A. Orpella
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
D. Bardés
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
J. Puigdollers
Affiliation:
Departament d'Enginyeria Electrònica. Campus Nord, Av. Gran Capita s/n. Mòdul C4. Universitat Politècnica de Catalunya, Barcelona, Spain
R. Alcubilla
Affiliation:
Departament d'Enginyeria Electrònica.Universitat Rovira i Virgili, Tarragona, Spain
Get access

Abstract

Effects of thermal annealing in the properties of PECVD amorphous-Si0.8C0.2:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed Si0.8C0.2:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A23.7
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Swada, T., Terada, N., Tsuge, S., Baba, T., Takahama, T., Wakisaka, K., Tsuda, S., and Nakano, S., Proceedings of the IEEE 1st World Conf. Photovoltaic Energy Conversion, Hawaii, 1994 (IEEE, New York, 1994) pp. 1219.Google Scholar
2. Orpella, A., Bardés, D., Alcubilla, R., Marsal, L.F., and Pallarès, J., IEEE Electron Device Lett., 20, 592, (1999).Google Scholar
3. Demichelis, F., Pirri, C.F., and Tresso, E., Philos. Magazine B, 66, 135, (1992).Google Scholar
4. Wang, H., Ma, Z., Allen, L.H. and Rigsbee, J.M., Amorphous Silicon Technology-1993, edited by Schiff, E.A., Thomson, M.J., Madan, A., Tanaka, K., LeComber, P.G., (Mater. Res. Soc. Proc. 297, San Francisco, USA, 1993), pp. 235.Google Scholar
5. Lau, S.P., Marshall, J.M., Dyer, T.E., Hepburn, A.R., Davies, J.F., Journal of Non-Crystalline Solids, 164–166, 813, (1993).Google Scholar
6. Giorgis, F., Giuliani, F., Pirri, C.F., Rigato, V., Tresso, E., Zandolin, S., Properties of amorphous and silicon and its alloys, Edited by Searle, T., EMIS Datareviews Series N° 19, Published by INSPEC, 1998, pp. 74.Google Scholar
7. Bullot, J. and Schmidt, M.P., Phys. Stat. Sol. B, 143, 345, (1987).Google Scholar
8. Demichelis, F., Pirri, C.F., Tresso, E., J. Appl. Phys., 72, 1327, (1992).Google Scholar
9. Yoon, S.F., Ji, R., Ahn, J., Journal of Elec. Mat., 25, 1845, (1996).Google Scholar
10. Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Fanciulli, M., Piesarkiewicz, T., Stapinski, T., Semicond. Sci. and Tech., 9, 1543, (1994).Google Scholar
11. Schubert, M.B., Mohring, H.D., Lotter, E., Bauer, G.H., IEEE Trans. on Elec. Devices, 36, 2863, (1989).Google Scholar
12. Gallioni, R., Rizzoli, R., Summonte, C., Demichelis, F., Giorgis, F., Pirri, C.F. et al. Amorphous Silicon Technology-1994, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M., Matsude, A., (Mater. Res. Soc. Proc. 336, San Francisco, USA, 1994), pp. 517.Google Scholar
13. Asano, A., Ichimura, T., Sakai, H., Uchida, Y., Jap. J. of Appl. Phys., 25, L388, (1986).Google Scholar
14. Fukazawa, T., Sasaki, K., Furukawa, S., Amorphous and Crystalline Silicon Carbide, Editors Harris, G.L. and Yang, C.Y.-W., Springer Proceedings in Physics, vol. 34, 1988, pp. 156.Google Scholar
15. Kondo, M., Shiba, T., Tamaki, Y., Nakamura, T., J. Electrochemical Soc., 143, 1949, (1996).Google Scholar