Skip to main content Accessibility help
×
Home

Effects of thermal annealing in the properties of PECVD a-SiC layers

  • L.F. Marsal (a1), J. Pallares (a1), A. Orpella (a1), D. Bardés (a1), J. Puigdollers (a1) and R. Alcubilla (a2)...

Abstract

Effects of thermal annealing in the properties of PECVD amorphous-Si0.8C0.2:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed Si0.8C0.2:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers.

Copyright

References

Hide All
1. Swada, T., Terada, N., Tsuge, S., Baba, T., Takahama, T., Wakisaka, K., Tsuda, S., and Nakano, S., Proceedings of the IEEE 1st World Conf. Photovoltaic Energy Conversion, Hawaii, 1994 (IEEE, New York, 1994) pp. 1219.
2. Orpella, A., Bardés, D., Alcubilla, R., Marsal, L.F., and Pallarès, J., IEEE Electron Device Lett., 20, 592, (1999).
3. Demichelis, F., Pirri, C.F., and Tresso, E., Philos. Magazine B, 66, 135, (1992).
4. Wang, H., Ma, Z., Allen, L.H. and Rigsbee, J.M., Amorphous Silicon Technology-1993, edited by Schiff, E.A., Thomson, M.J., Madan, A., Tanaka, K., LeComber, P.G., (Mater. Res. Soc. Proc. 297, San Francisco, USA, 1993), pp. 235.
5. Lau, S.P., Marshall, J.M., Dyer, T.E., Hepburn, A.R., Davies, J.F., Journal of Non-Crystalline Solids, 164–166, 813, (1993).
6. Giorgis, F., Giuliani, F., Pirri, C.F., Rigato, V., Tresso, E., Zandolin, S., Properties of amorphous and silicon and its alloys, Edited by Searle, T., EMIS Datareviews Series N° 19, Published by INSPEC, 1998, pp. 74.
7. Bullot, J. and Schmidt, M.P., Phys. Stat. Sol. B, 143, 345, (1987).
8. Demichelis, F., Pirri, C.F., Tresso, E., J. Appl. Phys., 72, 1327, (1992).
9. Yoon, S.F., Ji, R., Ahn, J., Journal of Elec. Mat., 25, 1845, (1996).
10. Demichelis, F., Crovini, G., Pirri, C.F., Tresso, E., Fanciulli, M., Piesarkiewicz, T., Stapinski, T., Semicond. Sci. and Tech., 9, 1543, (1994).
11. Schubert, M.B., Mohring, H.D., Lotter, E., Bauer, G.H., IEEE Trans. on Elec. Devices, 36, 2863, (1989).
12. Gallioni, R., Rizzoli, R., Summonte, C., Demichelis, F., Giorgis, F., Pirri, C.F. et al. Amorphous Silicon Technology-1994, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M., Matsude, A., (Mater. Res. Soc. Proc. 336, San Francisco, USA, 1994), pp. 517.
13. Asano, A., Ichimura, T., Sakai, H., Uchida, Y., Jap. J. of Appl. Phys., 25, L388, (1986).
14. Fukazawa, T., Sasaki, K., Furukawa, S., Amorphous and Crystalline Silicon Carbide, Editors Harris, G.L. and Yang, C.Y.-W., Springer Proceedings in Physics, vol. 34, 1988, pp. 156.
15. Kondo, M., Shiba, T., Tamaki, Y., Nakamura, T., J. Electrochemical Soc., 143, 1949, (1996).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed