Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-29T02:04:27.226Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Substrate Parameters on Amorphous-Crystalline Silicon Interface

Published online by Cambridge University Press:  21 February 2011

U. Besi Vetrella  and
J. D. Cohen
U. Besi Vetrella
Affiliation:
ENEA-CRIF, 80055 Portici (NA), ITALY
J. D. Cohen
Affiliation:
University of Oregon, Department of Physics, Eugene, OR 97403, USA
Get access

Abstract

Capacitance vs. temperature, deep-level transient spectroscopy (DLTS), and transient photocapacitance spectroscopy have been used to investigate the amorphous-crystalline silicon interface region of a device made of hydrogenated amorphous silicon deposited on a lightly doped n-type crystalline silicon.

By comparing our results between substrates with and without oxide contamination with those in a earlier study, we have been able to correlate the effects of substrate preparation on the density of interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 819
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lang, D. V., Cohen, J. D. and Harbison, J. P., Phys. Rev. B, 21, 5285 (1982)CrossRefGoogle Scholar
2. Unold, T. and Cohen, J. D., J. Non-Cryst. Solids 114, 603 (1989)Google Scholar
3. Michelson, C. E. and Cohen, J. D., Phys. Rev. B, 41, 1529 (1990)Google Scholar
4. Essick, J. M. and Cohen, J. D., Mat. Res. Soc. Sym. Proc. 118, 549 (1988)Google Scholar
5. Essick, J. M. and Cohen, J. D., Mat. Res. Soc. Sym. Proc. 149, 699 (1989)CrossRefGoogle Scholar
6. Higashi, G.S., Chabal, Y.J., Trucks, G.W., and Krishnan Raghavachari, Appl. Phys. Lett. 56, 656 (1990)Google Scholar
7. Gelatos, A. V., Cohen, J. D. and Harbison, J. P., Appl. Phys. Lett. 49, 722 (1986)Google Scholar
8. Gelatos, A. V. and Kanicky, J., Appl. Phys. Lett. 56, 940 (1990)Google Scholar
9. Matsuura, H. and Tanaka, K., Mat. Res. Soc. Sym. Proc. 118, 647 (1988)CrossRefGoogle Scholar