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Effects of Si Implantation on Sb Diffusion In Sb-Silica Spin-On Layers

Published online by Cambridge University Press:  22 February 2011

N. Moriya ,
R. Kalish ,
P. Brener  and
V. Richter
N. Moriya
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
R. Kalish
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
P. Brener
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
V. Richter
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
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Abstract

The effects of Si implantation (2×1015 · cm-2) on the diffusion of Sb in Sb doped silica (SiO2) spin-on layers and on their hardness were studied. RBS analysis and AES depth profiling showed that the implantation greatly retarded the Sb diffusion (1000–1200°C, 10 sec) in the oxide layer. Hence the high level of Sb near the SiO2/Si interface, which is clearly seen for the unimplanted part of the sample was not noticible in the non implanted part. AES depth profile measurements also showed that the deposited oxide layers were more sputter resistant as a result of the implantation. The above observations are related to the ion induced radiation damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 97
Copyright
Copyright © Materials Research Society 1988

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References

1. Elkins, P., Reinhardt, K. and Tang, B., VLSI Multilevel Intercon. Conf. Proc. (Santa Clara, CA, USA, 1986), p.102; G. E Whitewell, VLSI Multilevel Intercon. Conf. Proc. (Santa Clara, CA, USA, 1986), p. 292; J.K. Chu, J. Multani, S. Mittal J. Orton, and R. Jecmen, VLSI Multilevel Intercon. Conf. Proc. (Santa Clara, CA, USA, 1986), p. 474; S.K. Gupta and S.W. Kirtley, VLSI Multilevel Intercon. Conf. Proc. (Santa Clara, CA, USA, 1986), p. 506.Google Scholar
2. Dupuis, F., Shacham-Diamand, Y. and Oldham, W.G., 1985 Sym. on VLSI Tech. p. 52 (1985).Google Scholar
3. Ting, C., Arigal, I. and Lu, B.C., Proc. of Kodak Microelec. Seminar p. 139 (1982).Google Scholar
4. Nakamura, M. et al., J. Electrochem. Soc. 133, 1167(1986).Google Scholar
5. Vines, L. B. and Gupta, S.K., VLSI Multilevel Intercon. Conf. Proc. (Santa-Clara, CA, USA, 1986).Google Scholar
6. Schiltz, A., Microelec. Engineering 5,413 (1986).CrossRefGoogle Scholar
7. Levin, R.M. and Evans, K., J. Vac Sci. Technol. B1, 54 (1983).Google Scholar
8. Albrecht, H. and Lauterbach, C., Jpn. J. Appl. Phys. 25, L589 (1986)Google Scholar
9. Justice, M.H., Harnish, D.F. and Jones, H.F., Solid State Tech. 39, July 1978.Google Scholar
10. Primak, W., Phys.Rev. 110, 1240(1958).Google Scholar
11. Revesz, A.G., IEEE Trans. Nucl. Sci. NS–24, 2102(1977).CrossRefGoogle Scholar
12. Lucovsky, G., Manitini, M.J., Srivastava, J.K. and Irene, E.A., J. Vac. Sci. Technol. B5, 530 (1987).CrossRefGoogle Scholar
13. Pai, P.G., Chao, S.S., Takagi, Y. and Lucovski, G., J. Vac. Sci. Technol. A4, 689 (1986).CrossRefGoogle Scholar
14. Barry, M. L. and Manoliu, J., J. Electrochem Soc. 117, 258(1970); M.L. Barry, J. Electrochem Soc., 117, 1405(1970).Google Scholar
15. Shewmon, P.G., Diffusion in Solids, (McGraw-Hill, New-York 1963) p. 16.Google Scholar
16. Kimura, T., Hirose, M and Osaka, Y., J. Appl. Phys. 56, 932(1984).Google Scholar