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Effects of Power Density and Thickness On Aluminum-Induced Crystallization of PECVD Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Kendrick S Hsu ,
Jeremy Ou-Yang ,
Li P. Ren  and
Grant Z. Pan
Kendrick S Hsu
Affiliation:
kennyhsu@ucla.edu, University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Jeremy Ou-Yang
Affiliation:
jouyang@ucla.edu, University of California at Los Angeles, Microfabrication Laboratory, Los Angeles, CA, 90095, United States
Li P. Ren
Affiliation:
lpren@globalnanosystems.com, Global Nanosystems, Inc., Nanoelectronics and Nanophotonics Laboratory, Los Angeles, CA, 90025, United States
Grant Z. Pan
Affiliation:
gzpan@ee.ucla.edu, UCLA, Microfabrication Laboratory/EE, 420 WESTWOOD PLAZA, LOS ANGELES, CA, 90095, United States, 310 825 4593, 310 267 5277
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Abstract

The effect of power density and thickness on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) formed with plasma enhanced chemical vapor deposition (PECVD) was studied by using N2-protected conventional furnace reaction and optical microscopy. With the deposition power density ranging from 0.05 to 1.00 W/cm2 and the thickness from 500 to 5000Å, it was found that a low power density as well as a large a-Si thickness could result in a decrease of activation energy and therefore a significant reduction of the AIC reaction temperature. Scanning and transmission electron microscopy and X-ray diffraction were used to check the crystallinity and quality of the AIC thin films. High quality polysilicon thin films were achieved at an AIC reaction temperature as low as 120°C.

Keywords

diffusionSithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-03
Copyright
Copyright © Materials Research Society 2007

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