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Effects of Particle Concentration in CMP

  • Wonseop Choi (a1), Seung-Mahn Lee (a1) and Rajiv K. Singh (a1)

Abstract

This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For these experiments a sapphire wafer of constant surface roughness was used. For both 2psi and 4psi down force we observed increase in lateral friction forces with increasing solid loading. The lateral friction forces have been found to be significantly dependent on the contact area at the wafer-pad-slurry interface, thus showing that in-situ dynamic friction force changes in the surface coverage of particles. From these results, we conclude that the enhancement of frictional force is due to increased contact area at the wafer-pad-slurry interfaces. The lateral friction force measurement can provide an understanding of wafer-pad-slurry interactions.

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Effects of Particle Concentration in CMP

  • Wonseop Choi (a1), Seung-Mahn Lee (a1) and Rajiv K. Singh (a1)

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