Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T23:57:59.453Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

Published online by Cambridge University Press:  01 February 2011

You-Seok Suh ,
Greg Heuss ,
Jae-Hoon Lee  and
Veena Misra
You-Seok Suh
Affiliation:
Department of Electrical Engineering, North Carolina State University 1010 Man Campus Drive, Raleigh, NC 27695-7920, U.S.A.
Greg Heuss
Affiliation:
Department of Electrical Engineering, North Carolina State University 1010 Man Campus Drive, Raleigh, NC 27695-7920, U.S.A.
Jae-Hoon Lee
Affiliation:
Department of Electrical Engineering, North Carolina State University 1010 Man Campus Drive, Raleigh, NC 27695-7920, U.S.A.
Veena Misra
Affiliation:
Department of Electrical Engineering, North Carolina State University 1010 Man Campus Drive, Raleigh, NC 27695-7920, U.S.A.
Get access

Abstract

In this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B8.6
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hauser, J. R. and Lynch, W. T., SRC working paper (1997).Google Scholar
2. De, I., Johri, D., Srivastava, A., Osburn, C. M., Solid-State Electronics, 44, 1077 (2000).Google Scholar
3. Luan, H. F., Lee, S. J., Lee, C. H., Song, S. C., Mao, Y. L., Senzaki, Y., Roberts, D. and Kwong, D. L., IEDM Tech. Dig., 99, 99 (1999).Google Scholar
4. Nicolet, M. A., Appl. Surf. Sci., 91, 269 (1995).Google Scholar
5. Lee, Y. J., Suh, B. S., Kwon, M. S., Park, C. O., J. Appl. Phys., 85, 1927 (1999).Google Scholar
6. Kim, D. J., Kim, Y. T., Park, J. W., J. Appl. Phys., 82, 4847 (1997).Google Scholar
7. Hara, T., Kitamura, T., Tanaka, M., Kobayashi, T., Sakiyama, K., Onishi, S., Ishihara, K., and Kudo, J., J. Electrochem. Soc., 143, 264 (1996).Google Scholar
8. Grill, A., Jahnes, C., and Cabral, C., J. Mater. Res., 14, 1604 (1999).Google Scholar
9. Hara, T., Tanaka, M., Sakiyama, K., Onishi, S., Ishihara, K., and Kudo, J., Jpn. J. Appl. Phys., 36, 893 (1997).Google Scholar
10. Suh, Y. S., Heuss, G., Zhong, H., Hong, S. N. and Misra, V., VLSI Tech. Dig., 01, 47 (2001).Google Scholar
11. Wang, W. C., Chang, T. S., Huang, F. S., Solid State Elec., 37, 65 (1994).Google Scholar
12. Murarka, S. P., Silicides for VLSI Applications, Academic Press (1983).Google Scholar
13. Suh, Y. S., Heuss, G., and Misra, V., Appl. Phys. Lett., 25, 1403 (2002).Google Scholar