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Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

Published online by Cambridge University Press:  16 February 2011

H. S. Hajghassem ,
W. D. Brown ,
J. R. Yeargan  and
J. G. Williams
H. S. Hajghassem
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
W. D. Brown
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. R. Yeargan
Affiliation:
Dept. of Electrical Engineering, University of Arkansas, Fayetteville, AR.
J. G. Williams
Affiliation:
Dept. of Nuclear Engineering, University of Illinois at Urbana-Champaign, Urbana, IL.
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Abstract

This paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 151
Copyright
Copyright © Materials Research Society 1990

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References

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