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The Effects of Light and Electrical Stress on Asymmetric a-Si TFT

Published online by Cambridge University Press:  22 February 2011

C. H. Oh ,
I. J. Chung ,
W. Y. Kim ,
J. R. Hwang ,
S. K. Lee ,
Y. S. Kim ,
J. S. Park  and
M. K. Han
C. H. Oh
Affiliation:
An-Yang Research Lab., GoldStar Co., 533 Hogae-Dong, An-Yang 430–080, Korea
I. J. Chung
Affiliation:
An-Yang Research Lab., GoldStar Co., 533 Hogae-Dong, An-Yang 430–080, Korea
W. Y. Kim
Affiliation:
An-Yang Research Lab., GoldStar Co., 533 Hogae-Dong, An-Yang 430–080, Korea
J. R. Hwang
Affiliation:
Department of Electrical Engineering, Seoul National University, 56–1, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
S. K. Lee
Affiliation:
Department of Electrical Engineering, Seoul National University, 56–1, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
Y. S. Kim
Affiliation:
Department of Electrical Engineering, Seoul National University, 56–1, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
J. S. Park
Affiliation:
Department of Electrical Engineering, Seoul National University, 56–1, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
M. K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, 56–1, Shinrim-Dong, Kwanak-Ku, Seoul 151–742, Korea
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Abstract

The asymmetric amorphous silicon thin film transistors are fabricated and exposed to various stress environments. A visible light illumination of 200,000 Ix and gate bias of 30 V are applied to both asymmetric and widely used symmetric a-Si TFT's. It is observed that the leakage current of asymmetric structure, where only one electrode is fully overlapped by gate electrode, is much less than that of symmetric one. The visible light illumination as well as gate bias stress do not degrade the leakage current of the asymmetric a-Si TFT's, while the leakage current in die symmetric TFT's are increased considerably due to the stress. Also, the degree of degradation in the threshold voltage, the field effect mobility and the subthreshold slope of asymmetric TFT's are relatively much less than that of conventional symmetric TFT's.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 419
Copyright
Copyright © Materials Research Society 1993

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References

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