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Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

Published online by Cambridge University Press:  26 February 2011

H. Matsui ,
H. Ohtsuki ,
M. Ino  and
S. Ushio
H. Matsui
Affiliation:
VLSI Research and Development Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, Japan
H. Ohtsuki
Affiliation:
VLSI Research and Development Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, Japan
M. Ino
Affiliation:
VLSI Research and Development Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, Japan
S. Ushio
Affiliation:
VLSI Research and Development Center OKI Electric Industry Co., Ltd. Hachioji, Tokyo 193, Japan
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Abstract

Si samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 769
Copyright
Copyright © Materials Research Society 1986

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References

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