Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-20T17:28:48.750Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Ion Implantation and Temperature on Radiation-Induced Segregation In Ni-9Al Alloys

Published online by Cambridge University Press:  15 February 2011

M. J. Giacobbe ,
N. Q. Lam ,
P. R. Okamoto ,
N. J. Zaluzec  and
J. F. Stubbins
M. J. Giacobbe
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439 University of Illinois at Urbana-Champaign, Dept. of Nuclear Engineering, Urbana, IL 61801
N. Q. Lam
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
P. R. Okamoto
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
N. J. Zaluzec
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
J. F. Stubbins
Affiliation:
University of Illinois at Urbana-Champaign, Dept. of Nuclear Engineering, Urbana, IL 61801
Get access

Abstract

The effects of Ne and Sc implantation on radiation-induced segregation (RIS) in Ni- 9at.%Al were studied in-situ utilizing the high-voltage electron microscopeffandem accelerator facility at Argonne National Laboratory. A highly-focused 900-keV electron beam generated radial defect fluxes which, in turn, induced the transport of Al atoms toward the center of the electronirradiated area via the inverse-Kirkendall effect. The radial segregation rate of Al atoms was monitored by measuring the diameter of the γ′-Ni3Al zone which formed in the Al-enriched area during irradiation. Ne and Sc implantation effects on RIS were investigated at 550°C, while Ne effects were also examined at 625°C to determine the influence of temperature on the ability of Ne to act as defect trapping sites, causing RIS suppression. It was found that the RIS suppression effect of Ne increased with increasing irradiation temperature, and that Sc had a small RIS suppression effect which increased with increasing Sc implantation dose. Ne bubbles which formed during implantation are believed to be responsible for its strong suppression effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 551
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Okamoto, P.R. and Rehn, L.E., J. Nucl. Mater. 83, 2(1979).Google Scholar
[2] Wiedersich, H. and Lam, N.Q., in: Phase Transformations during Irradiation, ed. Nolfi, F.V. Jr. (Applied Science Publishers, London, 1983) p. 1.Google Scholar
[3] Johnson, R.A. and Lam, N.Q., Phys. Rev B 13, 4364 (1976).Google Scholar
[4] Lam, N.Q., Leaf, G.K., and Minkoff, M., J. Nucl. Mater. 118, 248 (1983).Google Scholar
[5] Lam, N.Q. and Okamoto, P.R., in Effect of Radiation on Materials: Twelfth International Symposium, ASTM STP 870, eds. Garner, F.A. and Perrin, J.S. (ASTM, Philadelphia 1985) p. 430.Google Scholar
[6] Lam, N.Q. and Okamoto, P.R., J. Nucl. Mater. 133–134, 430 (1985).Google Scholar
[7] Lam, N.Q. and Okamoto, P.R. in Solute-Defect Interaction: Theory and Experiment, eds. Saimoto, S. et al. (Pergamon Press, Toronto, 1986) p. 307.Google Scholar
[8] Okamoto, P.R. and Lam, N.Q., Mat. Res. Soc. Symp. Proc. 41, 241 (1985): N.Q. Lam, P.R. Okamoto, and G.K. Leaf, Mat. Res. Soc. Symp. Proc. 74, 523 (1987).Google Scholar
[4] Lam, N.Q., Leaf, G.K., and Minkoff, M., J. Nucl. Mater. 118, 248 (1983).Google Scholar
[9] Giacobbe, M.J., Lam, N.Q., Okamoto, P.R., Zaluzec, N.J., and Stubbins, J.F., MSA Proc., 988 (1996).Google Scholar
[10] Giacobbe, M.J., Lam, N.Q., Okamoto, P.R., and Stubbins, J.F., Mat. Res. Soc. Symp. Proc. 396, 57 (1995).Google Scholar
[11] Berger, A.S. and Siegel, R.W., J. Phys. F: Metal Phys., 9, L67 (1979).Google Scholar
[12] Ezawa, T., Wakai, E., Tanabe, T., and Oshima, R., J. Nucl. Mater. 191–194, 1346 (1992).Google Scholar